The influence of A/B-sites doping on antiferroelectricity of PZO energy storage films

Abstract

Antiferroelectrics are a kind of unique dielectric materials, mainly due to their polarization behavior, and composition-induced antiferroelectricity stability also draws considerable attention. In this work, single orthorhombic phase (Pb_0.95Bi_0.05)ZrO₃ (PBZ), Pb(Zr_0.95Bi_0.05)O₃ (PZB), and PbZrO₃ (PZO) films with good density and flatten surface was prepared on Pt/Ti/SiO₂/Si substrate via sol-gel method. Compared with pure PZO films, the PBZ and PZB films possess increased switching electric field difference Δ E due to enhanced forward switching field and the late response of backward switching field. In terms of stabilizing AFE phase, changing the tolerance factor t has the similar effect as Bi-doping the A/B sites in PZO, with the modification of the A-site being more effective than that of the B-site. PBZ films achieve a high recoverable energy density (W_rec) of 26.4 J/cm³ with energy efficiency (η) of 56.2% under an electric field of 1278 kV/cm, which exceeds other pure AFE materials. This work provides a fundamental understanding of the crystal structure-related antiferroelectricity of PZO materials and broadens the chemical doping route to enhance the electric properties of AFE materials.

Keywords

Antiferroelectrics / energy storage / PbZrO₃ / thin film / switching field

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