LiGe2(PO4)3: Cr3+ near-infrared phosphor samples were prepared using high-temperature solid-state method and the corresponding PC-LED devices were prepared. Detailed research was conducted on the photoluminescence characteristics of the samples and the performance of PC-LEDs. Under the excitation of 442 nm blue light, the phosphor obtained by calcination at 1 000 °C for 4 h exhibited an emission peak at 778 nm in the broadband near-infrared spectrum. The excitation peak of LiGe2(PO4)3: Cr3+ underwent the energy level transitions, 4A2(4F) → 4T1(4P) and 4A2(4F) → 4T1(4F), while the emission peak underwent the energy level transition, 4T2(4F) → 4A2(4F). By coating the phosphor on the surface of the InGaN blue-light chip, The near-infrared PC-LED was prepared, and a near-infrared LED light source with broadband emission was obtained. At a driving current of 60 mA, the near-infrared light radiation power was 7 mW. The experimental results indicate that LiGe2(PO4)3: Cr3+ near-infrared phosphor can be used to prepare broadband near-infrared LED light sources based on blue-light chips, which has intriguing applications in near-infrared spectroscopy.
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