Effects of Mg Doping Concentration on Resistive Switching Behavior and Properties of SrTi_1−yMg _yO₃ Films

Abstract

SrTi_1−yMg _yO₃ films were synthesized through sol-gel method on p ⁺-Si substrates. The effects of Mg doping concentration on the microstructure, switching behavior and properties of SrTi_1−yMg _yO₃ films were investigated. All SrTi_1−yMg _yO₃ films are polycrystalline, but the grain becomes coarser, and the number of holes is reduced when the Mg doping content increases from 0.04 to 0.16. SrTi_1−yMg _yO₃ films with different Mg doping concentrations all show bipolar resistive switching behaviors but display some differences in switching properties. When y = 0.08, the SrTi_1−yMg _yO₃ films show the largest R _HRS/R _LRS of 10⁵ and better fatigue endurance after 10³ cycles. When y ⩾ 0.08, the distribution of V _set and V _reset is narrow, indicating good stability of writing and erasing data for a resistive random access memory. At high-resistance state, the dominant conduction mechanism of SrTi_1−yMg _yO₃ films is the Schottky emission mechanism. However, at low-resistance state, the dominant conduction mechanisms are the filamentary conduction and changes to space charge limited current when y = 0.16.

Keywords

resistive switching films / SrTi_1−yMg _yO₃ / doping concentration / sol-gel

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