Research on Flexible GaInP/GaInAs/Ge/Bi₂Te₃/Sb₂Te₃ PV-TE Integrated Systems

Abstract

An optimal structure design of the lattice mismatched GaInP/GaInAs/Ge solar cell with high photoelectric conversion efficiency was proposed. Two-dimensional Bi₂Te₃ and Sb₂Te₃ nanosheets were prepared by solvothermal synthesis method used as thermoelectric (TE) functional materials, which is further hybrid with high conductive reduced graphene oxide (rGO) and carbon nanotubes (CNTs). TE film was then fabricated based on above materials. The power factor of the n-type TE film is 19.31 μW/mK², and the power factor of the p-type TE film is 97.40 μW /mK². The flexible TE device was integrated with flexible solar cell. Compared with the single photovoltaic (PV) cell, the efficiency of the as-prepared flexible integrated device measured under the AM1.5 illumination is significantly improved. The efficiency of the two parallel tests is increased from 27.26% and 26.59%, to 29.11% and 28.92%, respectively. The increasing ratio reaches 6.7%–8.8%.

Keywords

GaInP/GaInAs/Ge / flexible thermoelectric / integrated systems

References

[1] Mahmoudinezhad S, Atouei SA, Cotfas PA. Experimental and Numerical Study on the Transient Behavior of Multijunction Solar Cell-Thermoelectric Generator Hybrid System[J]. Energy Conversion and Management, 2019, 448: 184.

[2] Feng S, Yao T, Lu Y. Quasi-Industrially Produced Large-Area Microscale Graphene Flakes Assembled Film with Extremely High Thermoelectric Power Factor[J]. Nano Energy, 2019, 58: 63-68.

[3] Takikawa M, Joshin K. Pseudomorphic N-InGaP/InGaAs/GaAs High Electron Mobility Transistors for Low-Noise Amplifiers[J]. IEEE Electron Device Letters, 1983, 14: 406-408.

[4] Yu K, Chuang H, Lin K. Improved Temperature-Dependent Performances of a Novel InGaP-InGaAs-GaAs Double Channel Pseudomorphic High Electron Mobility Transistor (DC-PHEMT)[J]. IEEE Transactions on Electron Devices, 2002, 49: 1687-1693.

[5] rs www.ise.fraunhofer.de/en/press-and-media/press-releases/presseinformationen-2013/world-record-solar-cell-with-44.7-efficiency url }. Fraunhofer ISE, 2013

[6] Chiu PT, Law DC, Woo RL. Direct Semiconductor Bonded 5J Cell for Space and Terrestrial Applications[J]. IEEE Journal of Photovoltaics, 2014, 4: 493-497.

[7] Jackrel DB, Bank SR, Yuen HB. Dilute Nitride GaInNAs and GaInNAsSb Solar Cells by Molecular Beam Epitaxy[J]. Journal of Applied Physics, 2007, 101: 114 916.

[8] Patel P, Aiken D, Chumney D. Initial Results of the Monolithically Grown Six-Junction Inverted Metamorphic Multi-Junction Solar Cell[C], 2012

[9] Moriarty T, Jablonski J E K. Algorithm for Building a Spectrum for NREL’s One-Sun Multi-Source Simulator, 2012

[10] Essig S, Benick J, Schachtner M. Wafer-Bonded GaInP/GaAs// Si Solar Cells With 30% Efficiency Under Concentrated Sunlight[J]. IEEE Journal of Photovoltaics, 2015, 5: 977-981.

[11] Essig S, Steiner MA, Allebé C. Realization of GaInP/Si Dual-Junction Solar Cells With 29.8% 1-Sun Efficiency[J]. IEEE Journal of Photovoltaics, 2017, 6: 1012-1019.

[12] Cariou R, Benick J, Beutel P. Monolithic Two-Terminal III-V// Si Triple-Junction Solar Cells With 30.2% Efficiency Under 1-Sun AM1.5g[J]. IEEE Journal of Photovoltaics, 2017, 7: 367-373.

[13] Ren Z, Mailoa JP, Liu Z. Numerical Analysis of Radiative Recombination and Reabsorption in GaAs/Si Tandem[J]. IEEE Journal of Photovoltaics, 2015, 5: 1079-1086.