Dielectric properties of Ag(Nb1−xTa x)O3 and Bi2O3 Doped Ag(Nb1−xTa x)O3 ceramics
Xiuying Guo , Mi Xiao , Wei Ding , Xiawan Wu , Zhisheng Zhang
Journal of Wuhan University of Technology Materials Science Edition ›› 2007, Vol. 22 ›› Issue (3) : 518 -521.
Dielectric properties of Ag(Nb1−xTa x)O3 and Bi2O3 Doped Ag(Nb1−xTa x)O3 ceramics
Dielectric properties of Ag(Nb1−xTa x)O3 and Bi2O3 doped Ag(Nb1−xTa x)O3 solid solutions were investigated. The results show that with the increase of Ta content (x), the sintering temperature increased, and the dielectric loss (tanδ) and the temperature coefficient (αc) decreased. Ag(Nb1−xTa x)O3 (x=0.4) ceramics sintered at 1 100°C had the highest permittivity (516.8) and a lower tan° (0.0021) at 1 MHz, and its temperature coefficient was about 191 ppm/°C. The sintering temperature of Ag(Nb1−xTa x)O3 (x=0.4) was lowered by the addition of Bi2O3, and its dielectric properties were improved. Ag(Nb0.6Ta0.4)O3 ceramics with 2.5 wt% Bi2O3 addition presented the optimum dielectric properties (ε=566, tanδ= 0.0007 and αc≈0ppm/°C) (1 MHz).
Ag(Nb1−xTa x)O3 / doping / dielectric properties
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