Fabrication of poly-Si thin film on glass substrate by aluminum-induced crystallization

Abstract

Amorphous silicon (a-Si) thin films were deposited on glass substrate by PECVD, and poly-crystalline silicon (poly-Si) thin films were prepared by aluminum-induced crystallization (AIC). The effects of annealing temperature on the microstructure and morphology were investigated. The AIC poly-Si thin films were characterized by XRD, Raman and SEM. It is found that a-Si thin film has a amorphous structure after annealing at 400°C for 20 min, a-Si films begin to crystallize after annealing at 450°C for 20 min, and the crystallinity of a-Si thin films is enhanced obviously with the increment of annealing temperature.

Keywords

aluminum-induced crystallization / polycrystalline silicon thin film / amorphous silicon thin film / solar cells

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