Physically-based modeling for hole scattering rate in strained Si_1−xGe_x/(100)Si

Abstract

Based on the Fermi’s golden rule and the theory of Boltzmann collision term approximation, a physically-based model for hole scattering rate (SR) in strained Si_1−xGe_x/(100)Si was presented, which takes into account a variety of scattering mechanisms, including ionized impurity, acoustic phonon, non-polar optical phonon and alloy disorder scattering. It is indicated that the SRs of acoustic phonon and non-polar optical phonon decrease under the strain, and the total SR in strained Si_1−xGe_x/(100)Si also decreases obviously with increasing Ge fraction (x). Moreover, the total SR continues to show a constant tendency when x is less than 0.3. In comparison with bulk Si, the total SR of strained Si_1−xGe_x/(100) Si decreases by about 58%.

Keywords

strained Si_1−xGe_x / biaxial stress / hole scattering rate / effective mass

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