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Abstract
Some compounds of group III–V semiconductor materials exhibit very good piezoelectric, mechanical, and thermal properties and their use in surface acoustic wave (SAW) devices operating specially at GHz frequencies. These materials have been appreciated for a long time due to their high acoustic velocities, which are important parameters for active microelectromechanical systems (MEMS) devices. For this object, first-principles calculations of the anisotropy and the hydrostatic pressure effect on the mechanical, piezoelectric and some thermal properties of the (B3) boron phosphide are presented, using the density functional perturbation theory (DFPT). The independent elastic and compliance constants, the Reuss modulus, Voigt modulus, and the shear modulus, the Kleinman parameter, the Cauchy and Born coefficients, the elastic modulus, and the Poisson ratio for directions within the important crystallographic planes of this compound under pressure are obtained. The direct and converse piezoelectric coefficients, the longitudinal, transverse, and average sound velocity, the Debye temperature, and the Debye frequency of (B3) boron phosphide under pressure are also presented and compared with available experimental and theoretical data of the literature.
Keywords
(B3) BP compound
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mechanical properties
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pressure and anisotropy effect
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thermal properties
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S. Daoud, N. Bioud, N. Lebgaa.
Mechanical, piezoelectric and some thermal properties of (B3) BP under pressure.
Journal of Central South University, 2014, 21(1): 58-64 DOI:10.1007/s11771-014-1915-6
| [1] |
FaberS K T, MalloyJ KThe mechanical properties of semiconductors, semiconductors and semimetals [M], 1992, New York, Academic Press, Inc
|
| [2] |
AdachiSadaoPhysical properties of III-V semiconductor compounds [M], 1992, New York, John Wiley & Sons: 20-26
|
| [3] |
WeberM JHandbook of optical materials [M], 2003, New York, C RC Press LLC
|
| [4] |
BaroniS, GiannozziP, TestaA. Green’s function approach to linear response in solids [J]. Phys Rev, 1987, 58(18): 1861-1864
|
| [5] |
GiannozziP, De GironcoliS, PavoneP, Baronis. Ab-initio calculation of phonon dispersions in semiconductors [J]. Phys Rev B, 1991, 43: 7231-7242
|
| [6] |
GonzeX, BeukenJ M, CaracasR, DetrauxF, FuchsM, RignaneseG, SindicL, VerstraeteM, ZerahG, JolletF, TorrentM, RoyA, MikamiM, GhosezP H, RatyJ Y, AllanD C. First-principles computation of material properties: The ABINIT software project [J]. Comp Mat Sci, 2002, 25: 478-492
|
| [7] |
GonzeX, RignaneseG M, VerstraeteM, BeukenJ M, PouillonY, CaracasR, JolletF, TorrentM, ZerahG, MikamiM, GhosezP H, VeithenM, RatyJ Y, OlevanoV, BrunevalF, ReiningL, GodbyR, OnidaG, HamannD R, AllanD C. A brief introduction to the ABINIT software package [J]. Z Kristallogr, 2005, 220: 558-562
|
| [8] |
GoedeckerS. Fast Radix 2, 3, 4, and 5 kernels for fast Fourier transformations on computers with overlapping multiply-add instructions [J]. SIAM J Sci Comput, 1997, 18: 1605-1611
|
| [9] |
GoedeckerS, TeterM, HuetterJ. Separable dual-space gaussian pseudopotentials [J]. Phys Rev B, 1996, 54: 1703-1710
|
| [10] |
TroullierN, MartinsJ L. Efficient pseudopotentials for plane-wave calculations [J]. Phys Rev B, 1991, 43: 1993-2006
|
| [11] |
MonkhorstH J, PackJ D. Special points for Brillouin-zone integrations [J]. Phys Rev B, 1976, 13(12): 5188-5192
|
| [12] |
DaoudS, LoucifK, BioudN, LebgaaN, BelagraaL. Effect of hydrostatic pressure on the structural, elastic and electronic properties of (B3) boron phosphide [J]. Pramana J Phys, 2012, 79(1): 95-106
|
| [13] |
NielsenO H, MartinR M. Stresses in semiconductors: Ab initio calculations on Si, Ge, and GaAs [J]. Phy Rev B, 1985, 32(6): 3792-3805
|
| [14] |
HammanD R, WuX, RabeK M, VanderbilT D. Vanderbilt, Metric tensor formulation of strain in density functional perturbation theory [J]. Phys Rev B, 2005, 71(3): 035117
|
| [15] |
BenamraniA, KassaliK, BouamamaK h. Pseudopotential study of barium chalcogenides under hydrostatic pressure [J]. High Pressure Res, 2010, 30(1): 207-218
|
| [16] |
TropfW J, ThomasM F, HarrisT JProperties of crystals and glasses, Handbook of Optics [M], 2004, New York, McGraw-Hill: 32
|
| [17] |
ZhaoH, ChangA, WangY. Structural, elastic, and electronic properties of cubic perovskite BaHfO3 obtained from first principles [J]. Physica B, 2009, 404: 2192-2196
|
| [18] |
BingL, FengL R, YongY. Characterisation of the high pressure structural transition and elastic properties in boron arsenic, Chinese [J]. Phys B, 2010, 19(7): 076201
|
| [19] |
DaoudS, LoucifK, BioudN, LebgaaN. First-principles study of structural, elastic and mechanical properties of zinc-blende boron nitride (B3-BN) [J]. Acta Phy Pol A, 2012, 122(1): 109-115
|
| [20] |
NewnhamR EProperties of materials: Anisotropy, symmetry, structure [M], 2005, USA, Oxford University Press: 45-87
|
| [21] |
YangJSpecial topics in the theory of piezoelectricity [M], 2009, Berlin, Springer Science+Business Media, LLC: 193
|
| [22] |
KerryD KSemiconductors [M], 1991, New York, Macmillan Publishing Company: 103
|
| [23] |
WuX, VanderbiltD, HamannD R. Systematic treatment of displacements, strains and electric fields in density-functional perturbation theory [J]. Phys Rev B, 2005, 72: 035105
|
| [24] |
BuG, CiplysD, ShurM, SchowalterL J, SchujmanS, GaskaR. Electromechanical coupling coefficient for surface acoustic waves in single-crystal bulk aluminum nitride [J]. Appl Phys Lett, 2004, 84: 4611-4613
|
| [25] |
LideD RHandbook of chemistry and physics [M], 199980th edBoca Raton, CRC Publication
|
| [26] |
SteigmeierE F. The Debye temperatures of III-V compounds [J]. Appl Phys Lett, 1963, 3(1): 6-8
|
| [27] |
MadelungONumerical data and functional relation-ships in science and technology-crystal and solid state physics [M], 1972, Berlin: Landolt-Börnstein, Springer: 770
|
| [28] |
NarainS. Analysis of the debye temperature for ANB8-N type ionic and partially covalent crystals [J]. Phys Status Solidi B, 1994, 182(2): 273-278
|
| [29] |
KumarV, JhaV, ShrivastavaA K. Debye temperature and melting point of II-VI and III-V Semiconductors [J]. Cryst Res Technol, 2010, 45(9): 920-924
|
| [30] |
ShindéS L, GoelaJHigh thermal conductivity materials [M], 2006, New York, Springer: 40
|
| [31] |
AndersonO L. The Debye temperature of vitreous silica [J]. J Phys Chem Solids, 1959, 12(1): 41-52
|