Preparation and properties of SrBi_2.2 Ta₂O₉ thin film

Abstract

SrBi_2.2 Ta₂O₉ (SBT) thin film with thickness of 2 µm was successfully prepared by sol-gel method, using strontium acetate semihydrate [Sr(CH₃ COO)₂ · 1/2H₂O] and bismth subnitrate [BiO(NO₃)], and tantalum ethoxide [Ta(OCH₂CH₃)₅] as source materials, glacial acetic and ethylene glycol as solvents. The X-ray diffraction (XRD) and transmission electron microscope(TEM) results indicate that SBT layer-perovskite phase obtained has to be single phase, SBT thin film is formed after being annealed at 800 °C for for 1 min. The typical hysteresis loop of SBT thin film on Pt/Ti/SiO₂/Si is obtained, and the measured polarization value of the SBT thin film is 4. 2 µ/C/cm².

Keywords

SrBi_2.2 Ta₂O₉ / sol-gel technique / thin film / ferroelectric

References

[1] BaoD H, WangZ H, RenW, et al.. Crystallization kinetics of Ba_0.8 Sr_0.2 TiO₃ sols and sol-gel synthesis of Ba_0.8 Sr_0.2 TiO₃ thin films [J]. Ceramic International, 1999, 25(3): 261-265

[2] MartinC R, AksayI A. Topographical evolution of lead zirconate titante (PZT) thin films patterned by micromolding in capillaries[J]. J Phys Chem B, 2003, 107(18): 4261-4268

[3] HyunJ C, JinH K, SeongI W. (Pb, Sr) TiO₃ thin films for a ULSIDRAM capacitor prepared by liquid source misted chemical deposition[J]. Chem Mater, 2001, 13(5): 1441-1443

[4] TomarM S, MelgarejoR E, HidalgoA, et al.. Structural and ferroelectric studies of Bi_3.44 La_0.56 Ti₃O₁₂ films [J]. Appl Phys Lett, 2003, 83(2): 341-343

[5] AraujoC A, CuchiareJ D, McminanL D, et al.. Fatigue-free ferroelectric capacitors with platinum electrodes[J]. Nature, 1995, 374: 627-629

[6] DatR, LeeJ K, AucielliO, et al.. Pulsed laser ablation synthesis and characterization of layered Pt/SrBi₂ Ta₂ O₉/Pt ferroelectric capacitors with practically no polarization fatigue[J]. Appl Phys Lett, 1995, 67(4): 572-574

[7] DasR R, BhattacharyaP, PerezW, et al.. Ferroelectric properties of laser-ablated Sr_1−x A_xBi₂ Ta₂ O₉ thin films [J]. Appl Phys Lett, 2002, 80(4): 637-639

[8] LiT K, ZhuY F, DesuS B, et al.. Metralorganic chemical vapor deposition of ferroelectric SrBi₂ Ta₂ O₉ thin films[J]. Appl Phys Lett, 1996, 68(5): 616-618

[9] ZhangZ G, LiuJ S, WangY N, et al.. Fatigue characteristics of SrBi₂ Ta₂ O₉ thin films prepares by metaloganic decomposition [J]. Appl Phys Lett, 1998, 73(6): 788-790

[10] ZhouQ F, ChanH L, ChoyC L. Synthesis and properties of ferroelectric SrBi₂ Ta₂ O₉ powder and films prepared by a sol-gel process [J]. Journal of Non-crystalline Solids, 1999, 254: 106-111

[11] ItoY, UshikuboM, YokoyamaS, et al.. New low temperature processing of sol-gel SrBi₂ Ta₂ O₉ thin films [J]. Jpn J Appl Phys, 1, Regul Pap Short Notes Rev Pap, 1996, 35(9B): 4925-4929

[12] RavichandranD, YamakawaK, BhallaA S, et al.. Alkoxide derived SrBi₂ Ta₂ O₉ phase pure powder and thin films[J]. Journal of Sol-gel Science and Technology, 1997, 9(1): 95-101

[13] BoyleT J, BuchheitC D, RodriguezM A, et al.. Formation of SrBi₂ Ta₂ O₉: Part I. Synthesis and characterization of a novel “sol-gel” solution for production of ferroelectric SrBi₂ Ta₂ O₉ thin films [J]. J Mater Res, 1996, 11(9): 2274-2281

[14] WangW, ZhouY, ChenS, et al.. Preparation of strontium bismuth tantalum (SBT) fine power by solgel process using bismuth subnitrate as bismuth source[J]. Journal of Materials Science and Technology, 2001, 17(1): 25-26

[15] HayashiT, TakahashiH, HaraT. Chemical processing and dielectric properties of ferroelectric SrBi₂ Ta₂ O₉ thin films[J]. Jpn J Appl Phys, 1, Regul Pap Short Notes Rev Pap, 1996, 35(9B): 4952-4955