Β-Ga2O3 diodes with ultra-high surge current enabled by Ag/AMB-AlN flip-chip packaging

Zi-Lin Hao; Chen-Yi Dai; Zheng Zhang; Yuan-Xi Jia; Xue-Feng Wu

doi:10.1016/j.jnlest.2026.100347

Journal of Electronic Science and Technology ›› 2026, Vol. 24 ›› Issue (1) :100347 DOI: 10.1016/j.jnlest.2026.100347

research-article

Β-Ga₂O₃ diodes with ultra-high surge current enabled by Ag/AMB-AlN flip-chip packaging

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^a Beijing Microelectronics Technology Institute, Beijing, 100076, China

^b School of Integrated Circuits, Tsinghua University, Beijing, 100084, China

^c Beijing Yuxiang Electronics Co., Ltd., Beijing, 100010, China

^* E-mail addresses: haozilin@mxtronics.com (Z.-L. Hao),

daichenyi@mxtronics.com (C.-Y. Dai),

zhangzheng@mxtronics.com (Z. Zhang),

505458849@qq.com (Y.-X. Jia),

wuxuefeng@mxtronics.com (X.-F. Wu).

Zi-Lin Hao was born in Henan, China in 1997. He received the B.S. degree in welding technology and engineering and the M.S. degree in materials processing engineering from Harbin Institute of Technology, Harbin, China in 2020 and 2022, respectively. He is currently serving as a Packaging Engineer at Beijing Microelectronics Technology Institute, Beijing, China. His research interests include power device packaging, system-in-package (SiP) integration, and wide bandgap semiconductor packaging.

Chen-Yi Dai was born in Zhejiang, China in 1990. He received the B.S. degree from Hefei University of Technology, Hefei, China in 2013 and the M.S. degree from Beijing Institute of Technology, Beijing, China in 2016. He is currently serving as a Packaging Engineer at Beijing Microelectronics Technology Institute. He is also pursuing the Ph.D. degree in integrated circuit engineering at Tsinghua University, Beijing, China. His research interest mainly focuses on the electronic packaging technology for high-reliability devices.

Zheng Zhang was born in Beijing, China in 1994. He received the B.S. degree in electronic engineering and automation from Beijing University of Civil Engineering and Architecture, Beijing, China in 2016. He is currently serving as the Marketing Director at Beijing Microelectronics Technology Institute. His research interests include advanced packaging technologies, SiP integration, and wide bandgap semiconductor packaging.

Yuan-Xi Jia was born in Tianjin, China in 1997. He received the B.S. degree from Jilin University, Changchun, China in 2019 and the M.S. degree from University of Electronic Science and Technology of China, Chengdu, China in 2023. He is currently serving as a Circuit Design Engineer at Beijing Yuxiang Electronics Co., Ltd., Beijing, China. His research interest mainly focuses on the design and fabrication of power semiconductor devices.

Xue-Feng Wu was born in Shanxi, China in 1994. He received the Ph.D. degree in materials and chemical engineering from Beijing Institute of Technology in 2025. He is currently serving as an R&D Engineer at Beijing Microelectronics Technology Institute. His research interests include power device packaging, SiP integration, and wide bandgap semiconductor packaging.

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Abstract

Owing to superior breakdown voltage and excellent robustness, the beta-gallium oxide (β-Ga₂O₃) power device has emerged as a pivotal research frontier in power electronics. Although advanced packaging strategies, including nano-silver paste sintering, alumina direct bond copper (DBC) substrates, and flip-chip structures, have been adopted to mitigate the intrinsic low thermal conductivity of β-Ga₂O₃. However, a further reduction in the thermal resistance while maintaining high reliability remains a challenge. This study introduces a novel packaging methodology that synergistically integrates nano-silver films with aluminum nitride active metal brazing (AMB-AlN) substrates, achieving an ultra-low junction-to-case thermal resistance. By comprehensive reliability assessments on β-Ga₂O₃ Schottky barrier diodes (SBDs) and hetero-junction diodes (HJDs), the results demonstrate that the SBDs and HJDs exhibit surge current densities of 0.876 kA/cm² and 0.778 kA/cm², respectively, which represents a significant advancement in device performance benchmarks. These advancements provide critical insights into packaging design for high-reliability ultrawide bandgap semiconductor systems.

Keywords

Flip-chip packaging / Surge robustness / Thermal resistance / Ultrawide bandgap semiconductor / β-Ga₂O₃

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Zi-Lin Hao, Chen-Yi Dai, Zheng Zhang, Yuan-Xi Jia, Xue-Feng Wu. Β-Ga₂O₃ diodes with ultra-high surge current enabled by Ag/AMB-AlN flip-chip packaging. Journal of Electronic Science and Technology, 2026, 24(1): 100347 DOI:10.1016/j.jnlest.2026.100347

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CRediT authorship contribution statement

Zi-Lin Hao: Writing–original draft, Visualization, Resources, Formal analysis, Data curation, Conceptualization. Chen-Yi Dai: Writing–review & editing, Supervision, Investigation, Conceptualization. Zheng Zhang: Validation, Methodology, Conceptualization. Yuan-Xi Jia: Resources, Methodology, Investigation, Formal analysis, Data curation. Xue-Feng Wu: Resources, Validation, Investigation, Data curation.

Declaration of competing interest

The authors declare the following personal relationships which may be considered as competing interests: Yuan-Xi Jia is currently employed by Beijing Yuxiang Electronics Co., Ltd., Beijing, China. Other authors declare that there are no competing interests.

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