Scalabilities of LEDs and VCSELs with tunnel-regenerated multi-active region structure

Abstract

Scalabilities of light-emitting diodes (LEDs) and vertical-cavity surface-emitting lasers (VCSELs) with tunnel-regenerated multi-active-region (TRMAR) structure were investigated. It was found that the output optical power and quantum efficiency of these new LEDs with TRMAR increased with the number of its active regions, but the threshold gain and threshold current density decreased. However, for VCSELs with TRMAR, the differential quantum efficiency and optical power increased with the number of the active region. The results suggest that LEDs and VCSELs with the TRMAR structure have some potential advantages over the conventional LEDs or VCSELs in high internal quantum efficiency, low heat generation, high round-trip gain, and so on. These advantages will make TRMAR LEDs or VCSELs more attractive for the industrial application.

Keywords

tunnel junction / cascade / scalability / light-emitting diodes (LEDs) / vertical-cavity surface-emitting lasers (VCSELs)

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Acknowledgements

This work was partly supported by the National Natural Science Foundation of China (Grant No. 61222501) and Doctoral Program of Higher Education of China (No. 20111103110019).

RIGHTS & PERMISSIONS

2014 Higher Education Press and Springer-Verlag Berlin Heidelberg