Quasi-digital memristor with self-rectifying and synaptic functions in crossbar array architectures

Tianyu Liu; Qingqing Wang; Qiuyu Liu; Jinze Li; Zhongjing Xia; Hongcheng Yang; Zilong Mao; Siyu Gou; Zhe Li; Chao Zhu; Xuefen Song; Lin Wang

doi:10.1002/flm2.70073

FlexMat ›› 2026, Vol. 3 ›› Issue (2) :331 -340. DOI: 10.1002/flm2.70073

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Quasi-digital memristor with self-rectifying and synaptic functions in crossbar array architectures

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Abstract

The advancement of edge neuromorphic computing hinges on developing memory devices that combine high integration density with intelligent functionality. However, high-density crossbar arrays, a conventional architecture for such systems, are often plagued by inherent sneak-path currents. Furthermore, achieving multifunctional integration of analog and digital bipolar resistive switching (RS) within a single device remains a significant challenge. Here, we report a quasi-digital memristor (QDM) based on an Ag/AgI/PbI₂/ITO architecture, which integrates tri-functional attributes: diode-like rectification, digital switching, and analog synaptic modulation. High self-rectifying ratio and selectivity are achieved through the strategic design of a p-n junction at the AgI/PbI₂ Interface. The switching mechanism is governed by the field-driven migration of dopant ions (e.g., Ag⁺, iodine vacancies) within the functional layers. In the analog mode, a synaptic array constructed from QDMs demonstrates a recognition accuracy of 97.2% for 8 × 8-pixel letter images (A–Z) after only six training epochs. In the digital mode, the QDM exhibits a high ON/OFF ratio, robust data retention, and excellent cycling endurance. Notably, the device also features a record-low set voltage, enabling superior system-level energy efficiency. This work presents a novel and effective pathway toward precise, high-density information processing in neuromorphic computing systems.

Keywords

crossbar arrays / neural networks / p-n junction / quasi-digital memristors / tri-functional attributes

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Tianyu Liu, Qingqing Wang, Qiuyu Liu, Jinze Li, Zhongjing Xia, Hongcheng Yang, Zilong Mao, Siyu Gou, Zhe Li, Chao Zhu, Xuefen Song, Lin Wang. Quasi-digital memristor with self-rectifying and synaptic functions in crossbar array architectures. FlexMat, 2026, 3 (2) : 331-340 DOI:10.1002/flm2.70073

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