Tailoring GaN nanorods with MoS2 on tungsten foil for enhanced photoelectrochemical performance
Bheem Singh , Vishnu Aggarwal , Rahul Kumar , Govinda Chandra Behera , Sudhanshu Gautam , Ramakrishnan Ganesan , Somnath C. Roy , M. Senthil Kumar , Suni Singh Kushvaha
Front. Energy ›› 2025, Vol. 19 ›› Issue (5) : 767 -778.
Tailoring GaN nanorods with MoS2 on tungsten foil for enhanced photoelectrochemical performance
Gallium nitride (GaN) nanostructures are highly promising for photoelectrochemical (PEC) water splitting due to their excellent electron mobility, chemical stability, and large surface area. However, the wide bandgap (~3.4 eV) of GaN limits its ability to absorb a broad spectrum of solar radiation, restricting its PEC performance. To address this limitation, MoS2/GaN nanorods (NRs) heterostructures for enhanced PEC applications were fabricated on thin tungsten foil using a combination of atmospheric pressure chemical vapor deposition (CVD) and laser molecular beam epitaxy (LMBE). The Raman spectroscopy and X-ray diffraction revealed the hexagonal phase of GaN and MoS2. X-ray photoelectron spectroscopy examined the electronic states of the GaN and MoS2. PEC measurements revealed that the MoS2-decorated GaN NRs exhibited a photocurrent density of approximately172 µA/cm2, nearly 2.5-fold compared to bare GaN NRs (~70 µA/cm2). The increased photocurrent density is ascribed to the Type II band alignment between MoS2 and GaN, which promotes effective charge separation, the decrease in charge transfer resistance, and the increase in active sites. The findings of this work underscore that the CVD and LMBE technique fabricated MoS2/GaN heterostructures on W metal foil substrate can provide the vital strategy to raise the PEC efficiency toward solar water splitting.
GaN nanorods / MoS2 / X-ray photoelectron spectroscopy / PEC water splitting.
Higher Education Press 2025
Supplementary files
/
| 〈 |
|
〉 |
PDF
(3343KB)
