Large-scale Preparation of Black CeO x with Stable Oxygen Vacancies
Huan Peng , Mengmeng Jiang , Jinfeng Ye , Lei Wang , Shunmin Ding , Chao Chen
Chemical Research in Chinese Universities ›› 2024, Vol. 41 ›› Issue (1) : 40 -47.
Large-scale Preparation of Black CeO x with Stable Oxygen Vacancies
Oxygen vacancy in ceria is a crucial regulation factor for modifying materials. The reduced oxygen vacancy will undergo rapid recombination and deactivation due to the imbalance perturbation of active oxygen species, thereby restricting their larger-scale application. In this work, we proposed a strategy to stabilize oxygen vacancy in four black CeO x(Si) (0<x<2) by quartz sand doping reduction. The formation of a Ce-Ov-Si (Ov denoted as oxygen vacancy) interface, instrumental in constructing stable oxygen vacancies, is facilitated by rich hydroxyl groups. Characterizations of CeO x(Si) reveal that the heterogeneous hydrogen at the Ce-O-Si interface encourages the lattice distortion in ceria to obtain stable oxygen vacancies. Guided by the reusable feature, quartz sand doping reduction is a facile and feasible strategy to stabilize the oxygen vacancy of black CeO x for advanced materials on a large scale.
Black CeO x / Oxygen vacancy / Ce-Ov-Si / Stabilization / Quartz sand
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Jilin University, The Editorial Department of Chemical Research in Chinese Universities and Springer-Verlag GmbH
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