Partial P-Type Metal Ions Doping Induced Variation of Both Crystal Structure and Oxygen Vacancy Within Cu/SnO₂ Metastable Solid Solution Nanofibers for Highly Sensitive C₂H₂ Sensor

Abstract

Partial P-type metal ions doping(PPMID) is an alternative method to further enhance the gas sensing performance of N-type metal oxides(NMOs) in contrast to that of P-N metal oxides heterojunctions, but the influences of the introduction of PPMID on the grain size and oxygen vacancies of NMOs have been rarely investigated. Herein, a simple and effective route has been demonstrated to address this problem with Cu²⁺-doped SnO₂ metastable solid solution nanofibers(CSMSSNs) as model and C₂H₂ as target molecule by combining electrospinning and calcination technique. It seems that the introduction of PPMID can also affect crystal structure and oxygen vacancies of NMOs, proven by combining X-ray diffraction(XRD) and X-ray photoelectron spectra(XPS). Thus, PPD, crystal structure and oxygen vacancies have been combined to clarify the enhanced sensing performance of Cu-doped SnO₂ metastable solid solution nanofibers angainst C₂H₂.

Keywords

P-Type doping / P-N heterojunction / Electrospinning / Metastable solid solution nanofiber / C₂H₂ sensor

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