Electrically Stimulated Band Alignment Transit in Black Phosphorus/β-Ga₂O₃ Heterostructure Dual-band Photodetector

Abstract

In recent decades, dual-band photodetectors have received widespread attention due to better target identification, which are considered as the development trend of next generation photodetectors. However, the traditional dual-band photodetectors based on heteroepitaxial growth, superlattice and multiple quantum well structures are limited by complex fabrication process and low integration. Herein, we report a UV/IR dual-band photodetector by integrating ultra-wide gap β-Ga₂O₃ and narrow-gap black phosphorous(BP) nanoflakes. A vertical van der Waals (vdW) heterostructure is formed between BP and β-Ga₂O₃ by mechanically exfoliated method integrated without the requirement of lattice match. The heterostructure devices show excellent rectification characteristics with high rectifying ratio of ca. 10⁶ and low reverse current around pA. Moreover, the device displays obvious photoresponse under UV and IR irradiations with responsivities of 0.87 and 2.15 mA/W, respectively. We also explore the band alignment transit within the heterostructure photodetector at different bias voltages. This work paves the way for fabricating novel dual-band photodetectors by utilizing 2D materials.

Keywords

Black phosphorous / β-Gallium oxide / van der Waals heterostructure / Dual-band photodetector

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