Weak UV-Stimulated Synaptic Transistors Based on Precise Tuning of Gallium-Doped Indium Zinc Oxide Nanofibers
Yuxiao Wang , Ruifu Zhou , Haofei Cong , Guangshou Chen , Yanyan Ma , Shuwen Xin , Dalong Ge , Yuanbin Qin , Seeram Ramakrishna , Xuhai Liu , Fengyun Wang
Advanced Fiber Materials ›› 2023, Vol. 5 ›› Issue (6) : 1919 -1933.
Weak UV-Stimulated Synaptic Transistors Based on Precise Tuning of Gallium-Doped Indium Zinc Oxide Nanofibers
In this work, a light-stimulated artificial synaptic transistor based on one-dimensional nanofibers of gallium-doped indium zinc oxides (IGZO) is demonstrated. The introduction of gallium into the nanofiber lattice can effectively alter the morphology and crystallinity, leading to a wider regulatory range of synaptic plasticity. The fabricated IGZO synaptic transistor with the optimal gallium concentration and low surface defects exhibits a superior photoresponsivity of 4300 A·W−1 and excellent photosensitivity, which can detect light signals as weak as 0.03 mW·cm−2. In particular, the paired-pulse facilitation index reaches up to 252% with over 2 h of enhanced memory retention exhibiting the long-term potentiation. Furthermore, the simulated image contrast and image recognition accuracy based on the newly designed IGZO synaptic transistors are successfully enhanced. These remarkable behaviors of light-stimulated synapses utilizing low-cost electrospun nanofibers have potential for ultraweak light applications in future artificial systems.
Key Research and Development Program of Shandong Province(2019GGX102067)
Natural Science Foundation of Shandong Province(ZR2020QF104)
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