Weak UV-Stimulated Synaptic Transistors Based on Precise Tuning of Gallium-Doped Indium Zinc Oxide Nanofibers
Yuxiao Wang, Ruifu Zhou, Haofei Cong, Guangshou Chen, Yanyan Ma, Shuwen Xin, Dalong Ge, Yuanbin Qin, Seeram Ramakrishna, Xuhai Liu, Fengyun Wang
Advanced Fiber Materials ›› 2023, Vol. 5 ›› Issue (6) : 1919-1933.
Weak UV-Stimulated Synaptic Transistors Based on Precise Tuning of Gallium-Doped Indium Zinc Oxide Nanofibers
In this work, a light-stimulated artificial synaptic transistor based on one-dimensional nanofibers of gallium-doped indium zinc oxides (IGZO) is demonstrated. The introduction of gallium into the nanofiber lattice can effectively alter the morphology and crystallinity, leading to a wider regulatory range of synaptic plasticity. The fabricated IGZO synaptic transistor with the optimal gallium concentration and low surface defects exhibits a superior photoresponsivity of 4300 A·W−1 and excellent photosensitivity, which can detect light signals as weak as 0.03 mW·cm−2. In particular, the paired-pulse facilitation index reaches up to 252% with over 2 h of enhanced memory retention exhibiting the long-term potentiation. Furthermore, the simulated image contrast and image recognition accuracy based on the newly designed IGZO synaptic transistors are successfully enhanced. These remarkable behaviors of light-stimulated synapses utilizing low-cost electrospun nanofibers have potential for ultraweak light applications in future artificial systems.
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