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Frontiers of Optoelectronics

Front. Optoelectron.    2020, Vol. 13 Issue (1) : 4-11
Exciton polaritons based on planar dielectric Si asymmetric nanogratings coupled with J-aggregated dyes film
Zhen CHAI1, Xiaoyong HU1,2(), Qihuang GONG1,2
1. State Key Laboratory for Mesoscopic Physics & Department of Physics, Collaborative Innovation Center of Quantum Matter, Beijing Academy of Quantum Information Sciences, Nano-optoelectronics Frontier Center of Ministry of Education, Peking University, Beijing 100871, China
2. Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China
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Optical cavity polaritons, originated from strong coupling between the excitons in materials and photons in the confined cavities field, have recently emerged as their applications in the high-speed low-power polaritons devices, low-threshold lasing and so on. However, the traditional exciton polaritons based on metal plasmonic structures or Fabry-Perot cavities suffer from the disadvantages of large intrinsic losses or hard to integrate and nanofabricate. This greatly limits the applications of exciton poalritons. Thus, here we implement a compact low-loss dielectric photonic – organic nanostructure by placing a 2-nm-thick PVA doped with TDBC film on top of a planar Si asymmetric nanogratings to reveal the exciton polaritons modes. We find a distinct anti-crossing dispersion behavior appears with a 117.16 meV Rabi splitting when varying the period of Si nanogratings. Polaritons dispersion and mode anti-crossing behaviors are also observed when considering the independence of the height of Si, width of Si nanowire B, and distance between the two Si nanowires in one period. This work offers an opportunity to realize low-loss novel polaritons applications.

Keywords exciton polaritons      dielectric Si asymmetric nanogratings      TDBC J-aggregated dyes film     
Corresponding Authors: Xiaoyong HU   
Just Accepted Date: 11 September 2019   Online First Date: 10 October 2019    Issue Date: 03 April 2020
 Cite this article:   
Zhen CHAI,Xiaoyong HU,Qihuang GONG. Exciton polaritons based on planar dielectric Si asymmetric nanogratings coupled with J-aggregated dyes film[J]. Front. Optoelectron., 2020, 13(1): 4-11.
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Xiaoyong HU
Qihuang GONG
Fig.1  Characteristics of planar dielectric Si asymmetric nanogratings and TDBC film. (a) Schematic illustration of planar dielectric Si asymmetric nanogratings-TDBC film system. The width of Si nanowire A and B are wa=110 nm and wb=100 nm, respectively. The distance of narrow gap between the Si nanowire A and B is d = 20 nm. The period of Si nanogratings is p = 320 nm. The yellow regions stand for confined optical fields of this system. (b) Real and image permittivity parts of PVA doped with TDBC film. (c) Transmission spectrum of a 320-nm-wide periodic Si nanogratings without TDBC film under the x-polarized incident beam. (d) Electric field distributions of Si nanogratings at the resonance wavelength 568 nm. (e) Transmission spectrum of the Si nanogratings-TDBC coupled system
Fig.2  Calculated transmission characteristics of dielectric Si asymmetric gratings-TDBC exciton system in dependence on the period of Si gratings under the x-polarized incident beam. (a) and (b) are transmission spectra of dielectric Si asymmetric gratings with TDBC film and without TDBC film by tuning the period from 290 to 400 nm. (c) Energy of the UPB (orange bubbles) and LPB (bule bubbles) as a function of Si nanograings periods. The solid lines are fit by the coupled oscillator model. The dashed lines are the energies of uncoupled Si nanogratings resonance minima and TDBC excitons. The double-headed arrow stands for the Rabi splitting energy. (d), (e) and (f) are the electric field distributions of Si gratings-TDBC film system when the period of Si nanogratings is 320 nm at the UPB wavelength 568 nm, exciton wavelength 590 nm, LPB wavelength 598 nm
Fig.3  Transmission properties of Si asymmetric nanogratings coupled with TDBC and without TDBC in dependence on the height of Si nanowires from 90 to 150 nm. (a) and (b) are the corresponding transmission spectra, respectively. And (c) and (d) are the Si nanogratings without TDBC film at the height of Si nanogratings d=90 nm and d=150 nm, respectively
Fig.4  Transmission spectra of Si nanogratings interacted with TDBC film or without TDBC film in dependence on the width of Si nanowire B from 80 to 140 nm ((a) and (b)) and distance of the narrow gap between the Si nanowire A and B from 10 to 45 nm ((c) and (d)), respectively
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