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Frontiers of Optoelectronics

Front. Optoelectron.    2016, Vol. 9 Issue (1) : 81-86     DOI: 10.1007/s12200-016-0573-8
Challenges in the ambient Raman spectroscopy characterization of methylammonium lead triiodide perovskite thin films
Yuanyuan ZHOU(),Hector F. GARCES,Nitin P. PADTURE()
School of Engineering, Brown University, Providence RI 02912, USA
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The importance of methylammonium lead triiodide (CH3NH3PbI3 or MAPbI3) organic-inorganic hybrid perovskites has shot up dramatically since their use in highly efficient thin-film perovskite solar cells (PSCs). However, the basic structural characterization of these fascinating materials remains sparse. In particular, Raman spectroscopy, which is a powerful vibrational spectroscopy characterization tool and complements other characterization methods, of MAPbI3 under ambient conditions is plagued with difficulties. Here, a systematic ambient Raman spectroscopy characterization study of MAPbI3 thin films is conducted under different conditions (excitation laser wavelength, integration time, filter characteristic). The results from this study help elucidate the possible sources of artifacts in the Raman spectra, and raise the awareness of the challenges in the ambient Raman spectroscopy of MAPbI3 perovskites. Approaches to overcome these challenges are suggested.

Keywords perovskite      solar cells      Raman spectroscopy      laser-degradation     
Corresponding Authors: Yuanyuan ZHOU,Nitin P. PADTURE   
Just Accepted Date: 31 December 2015   Online First Date: 20 January 2016    Issue Date: 18 March 2016
 Cite this article:   
Yuanyuan ZHOU,Hector F. GARCES,Nitin P. PADTURE. Challenges in the ambient Raman spectroscopy characterization of methylammonium lead triiodide perovskite thin films[J]. Front. Optoelectron., 2016, 9(1): 81-86.
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Yuanyuan ZHOU
Hector F. GARCES
Fig.1  Crystal structure of MAPbI3 perovskite: (a) ?100? view and (b) ?001? view
Fig.2  Characterization of MAPbI3 perovskite thin films deposited on Al substrate: (a) indexed XRD pattern, (b) top-view SEM image, and (c) cross-sectional SEM image
Fig.3  Raman spectra (left) of MAPbI3 thin films on Al-coated quartz substrates at short (0.2 s, 10 accumulations) and long (2.0 s, 10 accumulations) integration times (with regular notch filter), and corresponding before and after optical micrographs (right) of the sample: (a) 532 nm laser excitation, (b) 633 nm laser excitation
Fig.4  Raman spectra (left) of MAPbI3 thin film on Al-coated quartz substrate at short integration time (0.2 s, 10 accumulations), with low-wavelength holographic notch filter (532 nm laser excitation)
Fig.5  Fig. 5 Raman spectra of (a) PbI2 and (b) MAI thin films on Al substrates: short integration time (0.2 s, 10 accumulations); 532 nm laser excitation; with low-wavelength holographic notch filter. Dashed lines mark the centers of the PbI2 bands
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