Frequency response optimization of dual depletion InGaAs/InP PIN photodiodes

Abstract

The frequency response of a dual depletion p-i-n (PIN) photodiode structure is investigated. It is assumed that the light is incident on the N side and the drift region is located between the N contact and the absorption region. The numerical model takes into account the transit time and the capacitive effects and is applied to photodiodes with non-uniform illumination and linear electric field profile. With an adequate choice of the device’s structural parameters, dual depletion photodiodes can have larger bandwidths than the conventional PIN devices.

Keywords

PIN photodiodes / dual depletion / frequency response / modeling

References

[1] Pearsall T. P.. Ga0.47In0.53As: a ternary semiconductor for photodetector applications. IEEE Journal of Quantum Electronics, 1980, 16(7): 709-720.

[2] Wey Y. G., Giboney K., Bowers J., Rodwell M., Silvestre P., Thiagarajan P., . 110 GHz GaInAs/InP double heterostructure p-i-n photodetectores. Journal of Lightwave Technology, 1995, 13(7): 1490-1499.

[3] Fernandes C. M. C., Pereira J. M. T.. Bandwidth modeling and optimization of PIN photodiodes. in 2011 IEEE International Conference on Computer as a Tool (EUROCON), 2011 1-4.

[4] Effenberger F. J., Joshi A. M.. Ultrafast, dual-depletion region, InGaAs/InP p-i-n detector. Journal of Lightwave Technology, 1996, 14(8): 1859-1864.

[5] Fernandes C. C., Pereira J. T.. Frequency response analysis of dual depletion PIN photodiodes. in the 12th Portuguese-Spanish Conference on Electrical Engineering (XIICLEEE), 2011 1-4.

[6] Hollenhorst J. N.. Frequency response theory for multilayer photodiodes. Journal of Lightwave Technology, 1990, 8(4): 531-537.

[7] Pereira J. M. T.. Modelling the frequency response of p+InP/n-InGaAs/n+InP photodiodes with an arbitrary electric field profile. COMPEL–The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, 2007, 26(4): 1114-1122.

[8] Hammar C., Vinter B.. Calculation of the velocity-field characteristic of n-InP. Solid State Communication, 1972, 11(5): 751-754.

[9] Dentan M., Cremoux B. D.. Numerical simulation of the nonlinear response of a p-i-n photodiode under high illumination. Journal of Lightwave Technology, 1990, 8(8): 1137-1144.

[10] Radunovic J. B., Gvozdie D. M.. Nonstationary and nonlinear response of a p-i-n photodiode made of a two-valley semiconductor. IEEE Transaction on Electron Devices, 1993, 40(7): 1238-1244.