Characterization of high-performance AlGaN-based solar-blind UV photodetectors

Yuting Fu , Bing Liu , Jie Zhan , Fu Zheng , Zhaolan Sun

Optoelectronics Letters ›› 2025, Vol. 21 ›› Issue (7) : 402 -406.

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Optoelectronics Letters ›› 2025, Vol. 21 ›› Issue (7) : 402 -406. DOI: 10.1007/s11801-025-4109-6
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Characterization of high-performance AlGaN-based solar-blind UV photodetectors

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Abstract

This study begins with the fabrication and simulation of high-performance back-illuminated AlGaN-based solar-blind ultraviolet (UV) photodetectors. Based on the photodetectors, a low-noise, high-gain UV detection system circuit is designed and fabricated, enabling the detection, acquisition, and calibration of weak solar-blind UV signals. Experimental results demonstrate that under zero bias conditions, with a UV light power density of 3.45 µW/cm2 at 260 nm, the sample achieves a peak responsivity (R) of 0.085 A·W−1, an external quantum efficiency (EQE) of 40.7%, and a detectivity (D*) of 7.46×1012 cm·Hz1/2·W−1. The system exhibits a bandpass characteristic within the 240–280 nm wavelength range, coupled with a high signal-to-noise ratio (SNR) of 39.74 dB.

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Yuting Fu, Bing Liu, Jie Zhan, Fu Zheng, Zhaolan Sun. Characterization of high-performance AlGaN-based solar-blind UV photodetectors. Optoelectronics Letters, 2025, 21(7): 402-406 DOI:10.1007/s11801-025-4109-6

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