Lattice vibration, optical, and mechanical properties of aluminum phosphide (AlP) compound under the influence of temperature

Ibtisam F. Al Maaitah

Optoelectronics Letters ›› 2023, Vol. 19 ›› Issue (8) : 472 -475.

PDF
Optoelectronics Letters ›› 2023, Vol. 19 ›› Issue (8) : 472 -475. DOI: 10.1007/s11801-023-3004-2
Article

Lattice vibration, optical, and mechanical properties of aluminum phosphide (AlP) compound under the influence of temperature

Author information +
History +
PDF

Abstract

We have studied the lattice vibrations, optical and mechanical characteristics of the zinc-blende aluminum phosphide (AlP) compound. Investigations have been done into the effect of temperature on refractive index, optical dielectric constant, static dielectric constant, longitudinal and transversal sound velocities, reflectivity, susceptibility, phonon frequencies, micro-hardness, ionicity, and transverse effective charge. AlP is a wide-indirect band gap semiconductor and has a wide range of uses in high-performance optoelectronic devices, such as the manufacturing of infrared photo-detectors and light-emitting diodes. It's important to know the physical properties of semiconductor materials, like the AlP compound, to develop new technologies and devices. The calculations were carried out using the empirical pseudo-potential method (EPM). Comparative analysis with the existing experiment and other theoretical calculations reveals a satisfactory level of agreement.

Cite this article

Download citation ▾
Ibtisam F. Al Maaitah. Lattice vibration, optical, and mechanical properties of aluminum phosphide (AlP) compound under the influence of temperature. Optoelectronics Letters, 2023, 19(8): 472-475 DOI:10.1007/s11801-023-3004-2

登录浏览全文

4963

注册一个新账户 忘记密码

References

[1]

SweeneyS J, MukherjeeJ. Optoelectronic devices and materials[M]. Springer handbook of electronic and photonic materials, 2017, Berlin, Heidelberg, Springer: 1-1

[2]

VurgaftmanI, MeyerJ Á R, Ram-MohanL Á R R. Band parameters for III–V compound semiconductors and their alloys[J]. Journal of applied physics, 2001, 89: 5815-5875

[3]

KhaninD V, Kul’KovaS E. Electronic properties of III–V semiconductors[J]. Russian physics journal, 2005, 48: 70-77

[4]

SchubertE F. Light-emitting diodes[M], 2018, 2nd ed.Cambridge, Cambridge University Press: 11-14

[5]

KuechT F. III–V compound semiconductors: growth and structures[J]. Progress in crystal growth and characterization of materials, 2016, 62: 352-370

[6]

MaitiC K. Introducing technology computer-aided design (TCAD): fundamentals, simulations, and applications[M], 2017, Singapore, Jenny Stanford Publishing: 5-6

[7]

YangR, ZhuC, WeiQ, et al.. First-principles study on phases of AlP[J]. Solid state communications, 2017, 267: 23-28

[8]

ShindeS, PandyaA, JhaP K. Pressure induced phonon stiffening and softening in III–V phosphides[J]. Indian journal of pure & applied physics, 2010, 48(543):549

[9]

AhmoumH, LiG, BoughraraM, et al.. Shifting the plasmonic resonance to infrared region for AlP by inducing high S concentration: indirect to direct band gap[J]. Physica B: condensed matter, 2023, 654: 414718-414723

[10]

ElkenanyE B. Optoelectronic and mechanical properties of InSb semiconductor under the effect of temperature[J]. Silicon, 2016, 8: 391-396

[11]

DegheidyA R, ElkenanyE B, AlfrnwaniO A. Influence of composition, temperature and pressure on the optoelectronic and mechanical properties of InPxSb1−x alloys[J]. Computational condensed matter, 2018, 16: e00300-e00307

[12]

TienN T, JeonS, KimD, et al.. A flexible bimodal sensor array for simultaneous sensing of pressure and temperature[J]. Advanced materials, 2014, 26: 796-804

[13]

DegheidyA R, ElkenanyE B, AlfrnwaniO A. Mechanical properties of AlPxSb1−x semiconductor alloys under the effect of temperature and pressure[J]. Computational condensed matter, 2018, 16: e00310-e00316

[14]

AlM I F. Effect of temperature on the electronic, optical, mechanical characteristics, phonon frequencies, and sound velocities of GaP[J]. Optoelectronics letters, 2023, 19: 31-35

[15]

DegheidyA R, ElkenanyE B. Effect of temperature and pressure on the electronic structure of GaxIn1−xAsyP1−y alloys lattice matched to GaAs substrate[J]. Materials chemistry and physics, 2013, 143: 1-10

[16]

DegheidyA R, ElkenanyE B. Effect of pressure and temperature on electronic structure of GaN in the zinc-blende structure[J]. Semiconductors, 2011, 45: 1251-1257

[17]

HerveP, VandammeL K J. General relation between refractive index and energy gap in semiconduc-tors[J]. Infrared physics technology, 1994, 35: 609-615

[18]

AdachiS. Properties of group-IV, III–V and II–VI semiconductors[M], 2005, Singapore, John Wiley & Sons: 68

[19]

BaazizH, CharifiZ, BouarissaN. Ionicity and transverse effective charge in GaxIn1−xAsySb1−y quaternary alloy semiconductors[J]. Materials chemistry and physics, 2001, 68: 197-203

[20]

GhebouliB, GhebouliM A, FatmiM, et al.. First-principles study of structural, elastic, electronic and lattice dynamic properties of AsxPyN1−x−yAl quaternary alloys[J]. Journal of alloys and compounds, 2010, 507: 120-125

AI Summary AI Mindmap
PDF

142

Accesses

0

Citation

Detail

Sections
Recommended

AI思维导图

/