Simulation and optimization of dopant-free asymmetric heterojunction solar cells

Abstract

In order to further study doping-free asymmetric heterojunction (DASH) solar cells, we used AFORS-HET software to optimize the structure of Al/SnO₂/a-Si:H (i)/c-Si (p)/a-Si:H (i)/NiO_x/Ag. In a certain adjustment range, a series of simulations were carried out on the band gap, electron affinity, thickness and work function (WF) of NiO_x, thickness and WF of SnO₂, and the thickness of a-Si:H (i). After the above optimization, 21.08% efficiency was obtained at 300 K. This study shows that the solar cells with this structure have good light absorption properties in a very wide spectrum. The present simulation provides instructive suggestions for follow-up experiments of DASH solar cells.