Variations in the characteristics of Cd_xZn_1−xS films deposited with little Cd-containing solutions

Abstract

In order to prepare Cd_xZn_1−xS films with lower cadmium content and better performance as a buffer layer for copper indium gallium selenide (CIGS) solar cells, the performance of Cd_xZn_1−xS films deposited in a mixture of solutions containing extremely low cadmium sources was systematically investigated by chemical bath deposition (CBD) with the synergy of chemical experiments and numerical simulations. The experimental results show that the films have the best overall performance at a cadmium source condition of 0.007 M.