Structural and electrical investigation of BLT films deposited at different times using electron beam evaporation technique

Abstract

Thin films Bi₄Ti₃O₁₂ (BLT) were deposited using electron beam evaporation on silicon substrate at several times, also on AlN/Si and SiO₂/Si substrates. Thin films morphology and thickness were measured via scanning electron microscopy (SEM). The crystallography was studied using X-ray diffraction (XRD) technique for films which have a (0010) preferred orientation in all substrate types. The capacitance values were contingent on frequency value in C-V measurement. The ferroelectric characterization was investigated for BLT film deposited on isolator layer (SiO₂ or AlN) for Al/Bi₄Ti₃O₁₂/SiO₂/Si devices. Memory effect value varied from 1 V to 3 V depending on the thin films isolator on substrate.

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