Theoretical analysis on GaAs sub-cell doping concentration for triple-junction solar cells irradiated by proton based on TCAD simulation

Abstract

The degradation on the GaInP/GaAs/Ge triple-junction solar cells was irradiated by proton, and the solar cells with various GaAs sub-cell doping concentrations are modeled by the technology computer aided design (TCAD) simulation. The degradation results of related electrical parameters and external quantum efficiency (EQE) are studied. The degradation mechanism irradiated by proton is discussed. The short-circuit current, maximum power and conversion efficiency decrease with the increasing of GaAs sub-cell doping concentration. When the base doping concentration of GaAs sub-cell is 1×10¹⁶ cm⁻³, the degradation of short-circuit current is less than that of other base doping concentrations. Furthermore, under proton irradiation, with the increase of doping concentration of GaAs sub-cell, the open-circuit voltage first increases and then decreases. Meanwhile, when the base doping concentration of GaAs sub-cell is 2×10¹⁷ cm⁻³, the degradation of open-circuit voltage is less than that of other base doping concentrations. The research will provide the basic theories and device simulation method for GaInP/GaAs/Ge triple-junction solar cells radiation damage evaluation study and radiation hardening, and can provide guidance for the production of triple-junction solar cells in orbit.

References

[1] KUMARD, DHEERD K, KUMARL. Effect of different operating conditions on the conversion efficiency of triple-junction solar cell[J]. Materials research express, 2021, 8(3):035902

[2] LIJ, AIERKENA, ZHUANGY, et al.. 1 MeV electron and 10 MeV proton irradiation effects on inverted metamorphic GaInP/GaAs/InGaAs triple junction solar cell[J]. Solar energy materials and solar cells, 2021, 224: 111022

[3] VASILEIONT, LLORENSJ M, BUENCUERPOJ, et al.. Light absorption enhancement and radiation hardening for triple junction solar cell through bioinspired nanostructures[J]. Bioinspiration & biomimetics, 2021, 16(5): 056010

[4] LIJ W, WANGZ J, SHIC Y, et al.. Evaluating electron induced degradation of triple-junction solar cell by numerical simulation[J]. Optoelectronics letters, 2021, 17(5): 276-282

[5] SAEIDNAHAEIS, JOH J, SANGJ L, et al.. Investigation of the carrier movement through the tunneling junction in the InGaP/GaAs dual junction solar cell using the electrically and optically biased photoreflectance spectroscopy[J]. Energies, 2021, 14(638):1-12

[6] HMOUDAR A, MUZYCHKAY S, DUANX. Experimental and theoretical modelling of concentrating photovoltaic thermal system with Ge-based multi-junction solar cells[J]. Energies, 2022, 15(11):1-12

[7] LIJ W, WANGZ J, SHIC Y, et al.. Research on the emitter thickness optimization of GaInP/GaAs/Ge triple-junction solar cell under space proton irradiation based on TCAD simulation[J]. AIP advances, 2020, 10: 115110

[8] KOVALN E, DAP F, ARTACHOE. Ab initio electronic stopping power for protons in Ga_0.5In_0.5P/GaAs/Ge triple-junction solar cells for space applications[J]. Royal society open science, 2020, 7(11):200925-200925

[9] WANGR, FENGD, LIUY H, et al.. Effects of 50 keV and 100 keV proton irradiation on GaInP/GaAs/Ge triple-junction solar cells[J]. Plasma science & technology, 2012, 14(7):647-649

[10] ZHAOX F, AIERKENA, HEINIM, et al.. Degradation characteristics of electron and proton irradiated InGaAsP/InGaAs dual junction solar cell[J]. Solar energy materials and solar cells, 2020, 206: 110339

[11] XUY, HEIM N, SHENX, et al.. Spectral and electrical properties of 3 MeV and 10 MeV proton irradiated InGaAsP single junction solar cell[J]. Japanese journal of applied physics, 2019, 58(3):03

[12] ELAHIDOOSTA, FATHIPOURM, MOJABA. Modelling the effect of 1 MeV electron irradiation on the performance degradation of a single junction Al_xGa_1−xAs/GaAs solar cell[C]//2012 20th Iranian Conference on Electrical Engineering (ICEE), May 15–17, 2012, Tehran, Iran, 2012, New York, IEEE

[13] AUGUSTINEG, ROHATGIA, JOKERSTN M. Base doping optimization for radiation-hard Si, GaAs, and InP solar cells[J]. IEEE transactions on electron devices, 1992, 39(10): 2395-2400

[14] LEEMJ W, YUJ S, KIMJ N, et al.. Theoretical modeling and optimization of III–V GaInP/GaAs/Ge monolithic triple-junction solar cell[J]. Journal of the Korean Physical Society, 2014, 64(10):1561-1565

[15] DANIELS. Modeling radiation effects on a triple junction solar cell using silvaco ATLAS[D], 2012, Monterey, Naval Postgraduate School

[16] KHANA, YAMAGUCHIM, BOURGOINJ, et al.. Deep level transient spectroscopy analysis of 10 MeV proton and 1 MeV electron irradiation-induced defects in p-InGaP and InGaP-based solar cell[J]. Japanese journal of applied physics, 2014, 41(3a):1241-1246

[17] GONZALEZM, ANDREC L, WALTERSR J, et al.. Deep level defects in proton radiated GaAs grown on metamorphic SiGe/Si substrates[J]. Journal of applied physics, 2006, 100(3):1055

[18] Silvaco International. Atlas user’s mannal[EB/OL]. (2018-01-01) [2022-04-15]. http://www.silvaco.com.

[19] HUJ M, WUY Y, QIANY, et al.. Damage of electron irradiation to the GaInP/GaAs/Ge triple-junction solar cell[J]. Acta physica sinica, 2009, 58(7): 5051-5056

[20] FURUTAT, TANIYAMAH, TOMIZAWAM. Minority electron transport property in p-GaAs under high electric field[J]. Journal of applied physics, 1990, 67(1):293-299

[21] LIJ W, WANGZ J, SHIC Y, et al.. Modeling and simulating of radiation effects on the performance degradation of GaInP/GaAs/Ge triple-junction solar cells induced by different energy protons[J]. Acta physica sinica, 2020, 69(9): 098802

[22] ANSPAUGHB E. GaAs solar cell radiation handbook[M], 1996, California, Jet Propulsion Laboratory