Study on thickness uniformity of Ta2O5 film evaporated on the inner-face of a hemispherical substrate

Lingmao Xu , Yanchun He , Kun Li , Hui Zhou , Yuqing Xiong

Optoelectronics Letters ›› 2021, Vol. 17 ›› Issue (11) : 673 -677.

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Optoelectronics Letters ›› 2021, Vol. 17 ›› Issue (11) : 673 -677. DOI: 10.1007/s11801-021-1040-3
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Study on thickness uniformity of Ta2O5 film evaporated on the inner-face of a hemispherical substrate

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Abstract

Theoretical analysis and experimental study on the thickness distribution of Ta2O5 film evaporated on the inner-face of a hemispherical substrate are demonstrated. It is derived that the value of n/R and L/R influence the film thickness distribution (where R is the radius of the hemisphere, n and L are the horizontal distance and vertical height between the evaporation source and the center of the hemisphere, respectively). The whole hemispherical substrate can be coated when nL+R, otherwise there is a “blind area” on the substrate when the substrate is self-rotating. A hemispherical composite substrate with a radius of 200 mm is coated with Ta2O5 protective film under a certain configuration, the thickness of Ta2O5 film at the edge is 0.372 times the film at the vertex which shows that the evaporation characteristics of Ta2O5 tend to be a point source.

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Lingmao Xu, Yanchun He, Kun Li, Hui Zhou, Yuqing Xiong. Study on thickness uniformity of Ta2O5 film evaporated on the inner-face of a hemispherical substrate. Optoelectronics Letters, 2021, 17(11): 673-677 DOI:10.1007/s11801-021-1040-3

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