Accurate dependences of spontaneous emission factor, lifetime, and photon lifetime on threshold current

Abstract

Using the rate equation, several optical methods of characterizing the threshold of a laser diode (LD) were analyzed. The thresholds determined by all methods are consistent if the spontaneous-emission-coefficient (β) is small. If β<0.05, the thresholds obtained by different methods are different. Especially, for micro-nano LDs with a large β, these methods are starting to become inaccurate. However, the d S/dH is a relatively accurate method to characterize threshold of these LDs compared to other methods. The effects of the spontaneous-emission-lifetime (τ_sp) and the photon-lifetime (τ_p) on thresholds were analyzed. The exact functions between the threshold and the β, τ_sp and τ_p were obtained.

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