Optimization of GaAs-based 940 nm infrared light emitting diode with dual-junction design

Abstract

Epitaxial growths of the GaAs/AlGaAs-based 940 nm infrared light emitting diodes (LEDs) with dual junctions were carried out by using metalorganic chemical vapor deposition (MOCVD) with different doping concentrations and Al contents in Al_xGa_1-x As compound. And their optoelectric properties show that the optimal design for tunneling region corresponds to P⁺⁺ layer with hole concentration up to 1×10²⁰ cm⁻³, N⁺⁺ layer electron concentration up to 5×10¹⁹ cm⁻³ and constituent Al_0.2Ga_0.8As in the tunneling junction region. The optimized dual-junction LED has a forward bias of 2.93 V at an injection current of 50 mA, and its output power is 24.5 mW, which is 104% larger than that of the single junction (12 mW). Furthermore, the optimized device keeps the same spectral characteristics without introducing excessive voltage droop.

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