Optimization of GaAs-based 940 nm infrared light emitting diode with dual-junction design

Abstract

Epitaxial growths of the GaAs/AlGaAs-based 940 nm infrared light emitting diodes (LEDs) with dual junctions were carried out by using metalorganic chemical vapor deposition (MOCVD) with different doping concentrations and Al contents in Al_xGa_1-x As compound. And their optoelectric properties show that the optimal design for tunneling region corresponds to P⁺⁺ layer with hole concentration up to 1×10²⁰ cm⁻³, N⁺⁺ layer electron concentration up to 5×10¹⁹ cm⁻³ and constituent Al_0.2Ga_0.8As in the tunneling junction region. The optimized dual-junction LED has a forward bias of 2.93 V at an injection current of 50 mA, and its output power is 24.5 mW, which is 104% larger than that of the single junction (12 mW). Furthermore, the optimized device keeps the same spectral characteristics without introducing excessive voltage droop.

Keywords

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References

[1] Zinovchuk A V, Malyutenko O Y, Malyutenko V K, Podoltsev A D, Vilisov A A. J. Appl. Phys.. 2008, 104: 033115

[2] Xu DP, D’Souza M, Shin JC, Mawst LJ, Botez D. J. Crystal Growth. 2008, 310: 2370

[3] Kim D K, Lee H J, An W-C, Kim H G, Kwac L K. J. Korean Phys. Society. 2018, 72: 1020

[4] Lu H D, Zhang B, Guo F M. Opt Quant Electron. 2016, 48: 181

[5] Cevher Z, Folkes P A, Hier H S, VanMil B L, Connelly B C, Beck W A, Ren Y H. J. Appl. Phys.. 2018, 123: 161512

[6] Ban D, Luo H, Liu H C, Wasilewski Z R, Buchanan M. IEEE Photonics Technol. Lett.. 2005, 17: 1477

[7] Das D, Ghadi H, Tongbram B, Singh SM, Chakrabarti S. J. Lumin.. 2017, 192: 277

[8] Cortes-Mestizo I E, Briones E, Yee-Rendón CM, Zamora Peredo L, Espinosa-Vega LI, Droopad R, Méndez-García V H. J. Crystal Growth. 2017, 477: 59

[9] Herrera R A, Alvarez Ocampo C A. J. Nonlin. Optical Phys. & Mate.. 2017, 26: 1750031

[10] Walther T, Krysa AB. J. Microscopy. 2005, 268: 298

[11] Kim D K, Lee H J. J. Nanoscien. and Nanotechn.. 2018, 18: 2014

[12] Kawazu T, Noda T, Sakuma Y. Appl. Phys. Lett.. 2018, bd112: 072101

[13] Souto J, Pura J L, Torres A, Jiménez J, Bettiati M, Laruelle F J. Microelectron. Reliability. 2016, 64: 627

[14] Zhang Z Z, Fu Z L, Guo X G, Cao J C. Chin. Phys. B. 2018, 27: 030701

[15] Wu C-H, Wu C-H. Appl. Phys. Lett.. 2014, 105: 171104

[16] Thoma J, Liang B L, Lewis L, Hegarty S P, Huyet G, Huffaker D L. Appl. Phys. Lett.. 2013, 102: 113101