Optimization of GaAs-based 940 nm infrared light emitting diode with dual-junction design

Hong-liang Lin; Xiang-hua Zeng; Shi-man Shi; Hai-jun Tian; Mo Yang; Kai-ming Chu; Kai Yang; Quan-su Li

doi:10.1007/s11801-019-8113-6

Optoelectronics Letters ›› , Vol. 15 ›› Issue (2) : 113-116. DOI: 10.1007/s11801-019-8113-6

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Optimization of GaAs-based 940 nm infrared light emitting diode with dual-junction design

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Abstract

Epitaxial growths of the GaAs/AlGaAs-based 940 nm infrared light emitting diodes (LEDs) with dual junctions were carried out by using metalorganic chemical vapor deposition (MOCVD) with different doping concentrations and Al contents in Al_xGa₁_-x As compound. And their optoelectric properties show that the optimal design for tunneling region corresponds to P⁺⁺ layer with hole concentration up to 1×10²⁰ cm⁻³, N⁺⁺ layer electron concentration up to 5×10¹⁹ cm⁻³ and constituent Al_0.2Ga_0.8As in the tunneling junction region. The optimized dual-junction LED has a forward bias of 2.93 V at an injection current of 50 mA, and its output power is 24.5 mW, which is 104% larger than that of the single junction (12 mW). Furthermore, the optimized device keeps the same spectral characteristics without introducing excessive voltage droop.

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Hong-liang Lin, Xiang-hua Zeng, Shi-man Shi, Hai-jun Tian, Mo Yang, Kai-ming Chu, Kai Yang, Quan-su Li. Optimization of GaAs-based 940 nm infrared light emitting diode with dual-junction design. Optoelectronics Letters, , 15(2): 113‒116 https://doi.org/10.1007/s11801-019-8113-6

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This work has been supported by the National Key Research and Development Program of China (No. 2017YFB0403101), and the National Natural Science Foundation of China (No.61474096).