1 550 nm long-wavelength vertical-cavity surface emitting lasers

Li-Jie Liu; Yuan-Da Wu; Yue Wang; Jun-Ming An; Xiong-Wei Hu

doi:10.1007/s11801-018-8037-6

Optoelectronics Letters ›› : 342 -345. DOI: 10.1007/s11801-018-8037-6

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1 550 nm long-wavelength vertical-cavity surface emitting lasers

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Abstract

A 1 550 nm long-wavelength vertical cavity surface emitting laser (VCSEL) on InP substrate is designed and fabricated. The transfer matrix is used to compute reflectivity spectrum of the designed epitaxial layers. The epitaxial layers mainly consist of 40 pairs of n-Al_xGa_yIn(1−x−y)As/InP, and 6 strain compensated Al_xGa_yIn(1−x−y)As/InP quantum wells on n-InP substrate, respectively. The top distributed Bragg reflection (DBR) mirror system has been formed by fabricating 4.5 pairs of SiO₂/Si. The designed cavity mode is around 1 536 nm. The dip of the fabricated cavity mode is around 1 530 nm. The threshold current is 30 mA and the maximum output power is around 270 μW under CW operation at room temperature.

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Li-Jie Liu, Yuan-Da Wu, Yue Wang, Jun-Ming An, Xiong-Wei Hu. 1 550 nm long-wavelength vertical-cavity surface emitting lasers. Optoelectronics Letters 342-345 DOI:10.1007/s11801-018-8037-6

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