The impact of Al2O3 back interface layer on low-temperature growth of ultrathin Cu(In,Ga)Se2 solar cells

Yang Liu; Wei Liu; Meng-Xin Chen; Si-Han Shi; Zhi-Chao He; Jin-Long Gong; Tuo Wang; Zhi-Qiang Zhou; Fang-Fang Liu; Yun Sun; Shu Xu

doi:10.1007/s11801-018-8036-7

Optoelectronics Letters ›› , Vol. 14 ›› Issue (5) : 363-366. DOI: 10.1007/s11801-018-8036-7

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The impact of Al₂O₃ back interface layer on low-temperature growth of ultrathin Cu(In,Ga)Se₂ solar cells

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Abstract

With reducing the absorber layer thickness and processing temperature, the recombination at the back interface is severe, which both can result in the decrease of open-circuit voltage and fill factor. In this paper, we prepare Al₂O₃ by atomic layer deposition (ALD), and investigate the effect of its thickness on the performance of Cu(In,Ga)Se₂ (CIGS) solar cell. The device recombination activation energy (E_A) is increased from 1.04 eV to 1.11 eV when the thickness of Al₂O₃ is varied from 0 nm to 1 nm, and the height of back barrier is decreased from 48.54 meV to 38.05 meV. An efficiency of 11.57 % is achieved with 0.88-μm-thick CIGS absorber layer.

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Yang Liu, Wei Liu, Meng-Xin Chen, Si-Han Shi, Zhi-Chao He, Jin-Long Gong, Tuo Wang, Zhi-Qiang Zhou, Fang-Fang Liu, Yun Sun, Shu Xu. The impact of Al₂O₃ back interface layer on low-temperature growth of ultrathin Cu(In,Ga)Se₂ solar cells. Optoelectronics Letters, , 14(5): 363‒366 https://doi.org/10.1007/s11801-018-8036-7

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This work has been supported by the National Natural Science Foundation of China (Nos.61774089 and 61504067), and the Yang Fan Innovative & Entrepreneurial Research Team Project (No.2014YT02N037).