Design and fabrication of 25-channel 200 GHz AWG based on Si nanowire waveguides
Kai-li Li , Jia-shun Zhang , Jun-ming An , Jian-guang Li , Liang-liang Wang , Yue Wang , Yuan-da Wu , Xiao-jie Yin , Xiong-wei Hu
Optoelectronics Letters ›› : 241 -244.
Design and fabrication of 25-channel 200 GHz AWG based on Si nanowire waveguides
A 25-channel 200 GHz arrayed waveguide grating (AWG) based on Si nanowire waveguides is designed, simulated and fabricated. Transfer function method is used in the simulation and error analysis of AWG with width fluctuations. The 25-channel 200 GHz AWG exhibits central channel insertion loss of 6.7 dB, crosstalk of −13 dB, and central wavelength of 1 560.55 nm. The error analysis can explain the experimental results of 25-channel 200 GHz AWG well. By using deep ultraviolet lithography (DUV) and inductively coupled plasma etching (ICP) technologies, the devices are fabricated on silicon- on-insulator (SOI) substrate.
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