Thermal analysis and an improved heat-dissipation structure design for an AlGaInP-LED micro-array device

Chao Tian , Shu-xu Guo , Jing-qiu Liang , Zhong-zhu Liang , Feng-li Gao

Optoelectronics Letters ›› : 282 -286.

PDF
Optoelectronics Letters ›› : 282 -286. DOI: 10.1007/s11801-017-7048-z
Article

Thermal analysis and an improved heat-dissipation structure design for an AlGaInP-LED micro-array device

Author information +
History +
PDF

Abstract

This paper describes a novel finite element thermal analysis model for an AlGaInP-LED micro-array device. We also conduct a transient analysis for the internal temperature field distribution of a 5×5 array device when a 3×3 unit is driven by pulse current. In addition, for broader applications, a simplified thermal analysis model is introduced and its accuracy is verified. The internal temperature field distribution of 100×100 units is calculated using the simplified model. The temperature at the device center reaches 360.6 °C after 1.5 s. In order to solve the heat dissipation problem of the device, an optimized heat dissipation structure is designed, and the effects of the number and size of the heat dissipation fins on the thermal characteristics of the device are analyzed.

Cite this article

Download citation ▾
Chao Tian, Shu-xu Guo, Jing-qiu Liang, Zhong-zhu Liang, Feng-li Gao. Thermal analysis and an improved heat-dissipation structure design for an AlGaInP-LED micro-array device. Optoelectronics Letters 282-286 DOI:10.1007/s11801-017-7048-z

登录浏览全文

4963

注册一个新账户 忘记密码

References

[1]

GessmarnnT, SchubertE F. J. Appl. Phys., 2004, 95: 2203

[2]

LiG, WangW, YangW, LinY, WangH, LinZ. Reports on Progress in Physics Physical Society, 2016, 79: 056501

[3]

ShervinS, KimS-H, AsadiradM, KarpovSY, ZiminaD, RyouJ-H. ACS Photonics, 2016, 3: 486

[4]

KimM S, LeeH K, YuJ S. Semicond. Sci. Technol., 2013, 28: 2

[5]

HorngR H, WuB R, WengC F, RavadgarP, WuT M, WangS P, YangJ H, ChenY M, HsuT C, LiuA S, WuuD S. Opt. Express, 2013, 21: 19668

[6]

Li X F, Budai J D, Liu F, Howe J Y, Zhang J H, Wang X J, Gu Z J, Sun C J, Meltzer R S and Pan Z W, Light: Science & Applications 2, e50–1 (2013).

[7]

PanJ W, TsaietP J. Applied Optics, 2013, 52: 1358

[8]

LeeATL, ChenH, TanS-C, HuiSYR. IEEE Transactions on Power Electronics, 2016, 31: 65

[9]

TaoX, YangB. Journal of Power Electronics, 2016, 16: 815

[10]

XuM, MuQ, XiaoL, ZhouQ, WangH, JiZ. Materials Express, 2016, 6: 205

[11]

ChangS J, ZengX F, SheiS C, LiS. IEEE J. Topics Quantum Electron, 2013, 49: 846

[12]

LeeH K, KimM S, YuJ S. Microelectronic Engineering, 2013, 104: 29

[13]

LiK H, CheungY F. IEEE Photonics Technology Letters, 2013, 25: 374

[14]

KimH, ChoJ, LeeJ W, YoonS, KimH, SoneC, ParkY. Appl. Phys. Lett., 2007, 90: 063510

[15]

KimH, LeeJ M, HuhC, KimS W, KimD J, ParkS J, HwangH. Appl. Phys. Lett., 2000, 77: 1903

[16]

KimH, ParkS J, HwangH. IEEE Trans. Electron Devices, 2001, 48: 1065

[17]

ChangS J, KuoC H, SuY K, WuL W, SheuJ K, WenT C, LaiW C, ChenJ F, TsaiJ M. IEEE J. Sel. Topics Quantum Electron, 2002, 8: 744

[18]

RyuH Y, ShimJ I. Opt. Express, 2011, 19: 2886

[19]

TianP F, JonathanJ D M, GongZ, GuilhabertB, WatsonI M, GuE, ChenZ Z, ZhangG Y, DawsonM D. Appl. Phys. Lett., 2012, 101: 231110

[20]

TianC, WangW B, LiangJ Q, LiangZ Z, QinY X, LvJ G. AIP Advance, 2015, 5: 041309

[21]

DaiQ, ShanQ F, WangJ. Appl. Phys. Lett., 2010, 97: 133507

AI Summary AI Mindmap
PDF

69

Accesses

0

Citation

Detail

Sections
Recommended

AI思维导图

/