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Abstract
A kind of efficient non-doped white organic light-emitting diodes (WOLEDs) were realized by using a bright blue-emitting layer of 4,4-bis(2,2-diphenylvinyl)-1,1-biphenyl (DPVBi) combining with red emitting ultrathin layer of [2-methyl-6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene]propane-dinitrile (DCM2) and green emitting ultrathin layer of 10-(2-benzothiazolyl)-2,3,6,7-tetrahydro-1,1,7,7-tetramethyl-1H,5H, 11H(1)-benzopyropyrano(6,7-8-i,j)quinolizin-11-one (C545T) with different thicknesses of 0.05 nm, 0.10 nm and 0.20 nm. For comparing, a doped WOLED was also fabricated, in which C545T and DCM2 are codoped into DPVBi layer to provide blue, green and red emission for obtaining white emission. The maximum luminance and power efficiency of the doped WOLED are 5 765 cd/m2 at 16 V and 5.23 lm/W at 5 V, respectively, and its Commission Internationale de l’Eclairage (CIE) coordinate changes from (0.393 7, 0.445 3) at 5 V to (0.300 7, 0.373 8) at 12 V. When the thickness of the ultrathin C545T layer in non-doped WLEDs increases, the emission luminance increases, but all non-doped devices are in the yellow white region. The device with 0.10-nm-thick C545T has a maximum efficiency of 15.23 cd/A at 8 V and a maximum power efficiency of 6.51 lm/W at 7 V, and its maximum luminance is 10 620 cd/m2 at 16 V. CIE coordinates of non-doped WLEDs with C545T thickness of 0.05 nm, 0.10 nm and 0.20 nm are (0.447 3, 0.455 6), (0.464 0, 0.473 1) and (0.458 4, 0.470 0) at 8 V, respectively.1
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Hui-shan Yang, Qi-zhen Yang, Li-shuang Wu.
Organic light emitting devices employing non-doped structure.
Optoelectronics Letters 192-196 DOI:10.1007/s11801-017-7042-5
| [1] |
XiaoY., YangJ. P., ChengP. P., ZhuJ. J., XuZ. Q., DengY. H., LeeS. T., LiY. Q., TangJ. X.. Applied Physics Letters, 2012, 100: 013308
|
| [2] |
HwangJ. H., ChoiH. K., MoonJ. H., KimT. Y., ShinJ. W., JooC. W., HanJ. H., ChoD. H., HuhJ. W., ChoiS. Y., LeeJ. I., ChuH. Y.. Applied Physics Letters, 2012, 100: 133304
|
| [3] |
JiW., ZhangL., XuK., XieW., ZhangH., LiuG., YaoJ.. Organic Electronics, 2011, 12: 2192
|
| [4] |
JiW., ZhaoJ., SunZ., XieW.. Organic Electronics, 2011, 12: 1137
|
| [5] |
SuS., GonmoriE., SasabeH., KidoJ.. Advanced Materials, 2008, 20: 4189
|
| [6] |
ReinekeS., LindnerF., SchwartzG., SeidlerN., WalzerK., LussemB., LeoK.. Nature, 2009, 459: 234
|
| [7] |
HuangQ., MeerheimR., FehseK., SchwartzG., ReinekeS., WalzerK., LeoK.. SID Symposium Digest of Technical Papers, 2007, 38: 1282
|
| [8] |
KidoJ., KimuraM., NagaiK.. Science, 1995, 267: 1332
|
| [9] |
DeshpandeR. S., BulovicV., ForrestS. R.. Applied Physics Letters, 1999, 75: 888
|
| [10] |
D’AndradeB. W., ThompsonM. E., ForrestS. R.. Advanced Materials, 2002, 14: 147
|
| [11] |
TangC. W., VanslykeS. A., ChenC. H.. Journal of Applied Physics, 1989, 65: 3610
|
| [12] |
SakamotoG., AdachiC., KoyamaT., TaniguchiY., MerrittC. D., MurataH., KafafiZ. H.. Applied Physics Letters, 1999, 75: 766
|
| [13] |
XieZ. Y., HungL. S., LeeS. T.. Applied Physics Letters, 2001, 79: 1048
|
| [14] |
TsujiT., NakaS., OkadaH., OnnagawaH.. Applied Physics Letters, 2002, 81: 3329
|
| [15] |
W FX., Z JW., S YL., S TL.. Journal of Physics D: Applied Physics, 2003, 36: 2331
|
| [16] |
W FX., S YL., YZ.. Journal of Physics D: Applied Physics, 2003, 36: 1246
|
| [17] |
H SY., YZ., W FX., Y WS., WH., Y LM., J YH., S YL.. Semiconductor Science & Technology, 2006, 21: 1447
|
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