Fabrication of narrow pulse passively Q-switched self-stimulated Raman laser with c-cut Nd:GdVO4

Gao Shen , Zuo-han Li , Ming Han

Optoelectronics Letters ›› : 430 -432.

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Optoelectronics Letters ›› : 430 -432. DOI: 10.1007/s11801-016-6191-2
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Fabrication of narrow pulse passively Q-switched self-stimulated Raman laser with c-cut Nd:GdVO4

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Abstract

Combining the self-stimulated Raman scattering technology and saturable absorber of Cr4+:YAG, a 1.17 μm c-cut Nd:GdVO4 picosecond Q-switched laser is demonstrated in this paper. With an incident pump power of 10 W, the Q-switched laser with average power of 430 mW for 1.17 μm, pulse width of 270 ps, repetition rate of 13 kHz and the first order Stokes conversion efficiency of 4.3% is obtained. The Q-switched pulse width can be the narrowest in our research. In addition, the yellow laser at 0.58 μm is also achieved by using the LiB3O5 frequency doubling crystal.

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Gao Shen, Zuo-han Li, Ming Han. Fabrication of narrow pulse passively Q-switched self-stimulated Raman laser with c-cut Nd:GdVO4. Optoelectronics Letters 430-432 DOI:10.1007/s11801-016-6191-2

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