Fabrication of narrow pulse passively Q-switched self-stimulated Raman laser with c-cut Nd:GdVO<sub>4</sub>

Gao Shen; Zuo-han Li; Ming Han

doi:10.1007/s11801-016-6191-2

Optoelectronics Letters ›› , Vol. 12 ›› Issue (6) : 430-432. DOI: 10.1007/s11801-016-6191-2

Article

Fabrication of narrow pulse passively Q-switched self-stimulated Raman laser with c-cut Nd:GdVO₄

Gao Shen¹^,^a ,
Zuo-han Li² ,
Ming Han²

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Abstract

Combining the self-stimulated Raman scattering technology and saturable absorber of Cr⁴⁺:YAG, a 1.17 μm c-cut Nd:GdVO₄ picosecond Q-switched laser is demonstrated in this paper. With an incident pump power of 10 W, the Q-switched laser with average power of 430 mW for 1.17 μm, pulse width of 270 ps, repetition rate of 13 kHz and the first order Stokes conversion efficiency of 4.3% is obtained. The Q-switched pulse width can be the narrowest in our research. In addition, the yellow laser at 0.58 μm is also achieved by using the LiB₃O₅ frequency doubling crystal.

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Gao Shen, Zuo-han Li, Ming Han. Fabrication of narrow pulse passively Q-switched self-stimulated Raman laser with c-cut Nd:GdVO₄. Optoelectronics Letters, , 12(6): 430‒432 https://doi.org/10.1007/s11801-016-6191-2

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This work has been supported by the National Natural Science Foundation of China (No.61108021), the Fundamental Research Funds for the Central Universities (Nos.2013JBM091 and S16JB00010).