Structure optimization of high indium content InGaAs/InP heterostructure for the growth of In<sub>0.82</sub>Ga<sub>0.18</sub>As buffer layer

Qiu-lin Wei; Zuo-xing Guo; Lei Zhao; Liang Zhao; De-zeng Yuan; Guo-qing Miao; Mao-sheng Xia

doi:10.1007/s11801-016-6190-3

Optoelectronics Letters ›› , Vol. 12 ›› Issue (6) : 441-445. DOI: 10.1007/s11801-016-6190-3

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Structure optimization of high indium content InGaAs/InP heterostructure for the growth of In_0.82Ga_0.18As buffer layer

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Abstract

Microstructure and misfit dislocation behavior in In_xGa_1-xAs/InP heteroepitaxial materials grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) were analyzed by high resolution transmission electron microscopy (HRTEM), scanning electron microscopy (SEM), atomic force microscopy (AFM), Raman spectroscopy and Hall effect measurements. To optimize the structure of In_0.82Ga_0.18As/InP heterostructure, the In_xGa_1-xAs buffer layer was grown. The residual strain of the In_0.82Ga_0.18As epitaxial layer was calculated. Further, the periodic growth pattern of the misfit dislocation at the interface was discovered and verified. Then the effects of misfit dislocation on the surface morphology and microstructure of the material were studied. It is found that the misfit dislocation of high indium (In) content In_0.82Ga_0.82As epitaxial layer has significant influence on the carrier concentration.

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Qiu-lin Wei, Zuo-xing Guo, Lei Zhao, Liang Zhao, De-zeng Yuan, Guo-qing Miao, Mao-sheng Xia. Structure optimization of high indium content InGaAs/InP heterostructure for the growth of In_0.82Ga_0.18As buffer layer. Optoelectronics Letters, , 12(6): 441‒445 https://doi.org/10.1007/s11801-016-6190-3

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This work has been supported by the National Key Basic Research Program of China (No.2012CB619200), the National Natural Science Foundation of China (No.61474053), the State Key Laboratory for Mechanical Behavior of Materials of Xi'an Jiaotong University (No.20161806), and the Natural Science Basic Research Open Foundation of the Key Lab of Automobile Materials, Ministry of Education, Jilin University (No.1018320144001).