Design and optimization of BCCD in CMOS technology

Abstract

This paper optimizes the buried channel charge-coupled device (BCCD) structure fabricated by complementary metal oxide semiconductor (CMOS) technology. The optimized BCCD has advantages of low noise, high integration and high image quality. The charge transfer process shows that interface traps, weak fringing fields and potential well between adjacent gates all cause the decrease of charge transfer efficiency (CTE). CTE and well capacity are simulated with different operating voltages and gap sizes. CTE can achieve 99.999% and the well capacity reaches up to 25 000 electrons for the gap size of 130 nm and the maximum operating voltage of 3 V.

References

[1] MehtaS., PatelA., MehtaJ.. CCD or CMOS Image Sensor For Photography, IEEE Communications and Signal Processing, 2015, 0291

[2] YamadaT., KawakamiY., NakanoT., MutohN.. IEEE Transactions on Electron Devices, 1997, 44: 1580

[3] MarcelotO., EstribeauM., GoiffonV., Martin-GonthierP.. IEEE Transactions on Electron Devices, 2014, 61: 844

[4] FifeK., GamalA. E., Philip WongH.-S.. IEEE Journal of Solid-State Circuits, 2008, 43: 2990

[5] MayerF., PesentiS., BarbierF., BugnetH., EndicottJ., DevriereF., LigozatT.. CMOS Charge Transfer TDI With Front Side Enhanced Quantum Efficiency, 2015,

[6] FifeK., GamalA. E., Philip WongH.-S.. A 0.5 µm Pixel Frame-Transfer CCD Image Sensor in 110nm CMOS, IEEE International Electron Devices Meeting, 2007, 1003

[7] FifeK., GamalA. E., Philip WongH.-S.. Design and Characterization of Submicron CCDs in CMOS, 2009,

[8] ErcanA., HaspeslaghL., De MunckK., MinoglouK., LauwersA., De MoorP.. Prototype TDI Sensors in Embedded CCD in CMOS Technology, 2013,

[9] BorgJ., JohanssonJ.. IEEE Transactions on Electron Devices, 2011, 58: 2660

[10] Olivier Marcelot, Romain Molina, Matthieu Bouhier and Pierre Magnan, IEEE Transactions on Electron Devices 63, 1099 (2016).

[11] De MoorP., RobbeleinJ., HaspeslaghL., BoulencP., ErcanA., MinoglouK., LauwersA., De MunckK., RosmeulenM.. Enhanced Time Delay Integration Imaging Using Embedded CCD in CMOS Technology, IEEE International Electron Devices Meeting, 2014, 461