Photonic bandgap amorphous chalcogenide thin films with multilayered structure grown by pulsed laser deposition method

Abstract

Amorphous chalcogenide thin films were fabricated by the pulsed laser deposition technique. Thereafter, the stacks of multilayered thin films for reflectors and microcavity were designed for telecommunication wavelength. The prepared multilayered thin films for reflectors show good compatibility. The microcavity structure consists of Ge₂₅Ga₅Sb₁₀S₆₅ (doped with Er³⁺) spacer layer surrounded by two 5-layer As₄₀Se₆₀/Ge₂₅Sb₅S₇₀ reflectors. Scanning/transmission electron microscopy results show good periodicity, great adherence and smooth interfaces between the alternating dielectric layers, which confirms a suitable compatibility between different materials. The results demonstrate that the chalcogenides can be used for preparing vertical Bragg reflectors and microcavity with high quality.

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