Al-doping effects on the photovoltaic performance of inverted polymer solar cells

Xuan Yu; Ya-feng Shi; Xiao-ming Yu; Jian-jun Zhang; Ya-ming Ge; Li-qiao Chen; Hong-jun Pan

doi:10.1007/s11801-016-6003-8

Optoelectronics Letters ›› , Vol. 12 ›› Issue (2) : 106-109. DOI: 10.1007/s11801-016-6003-8

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Al-doping effects on the photovoltaic performance of inverted polymer solar cells

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Abstract

The properties of Al-doped ZnO (AZO) play an important role in the photovoltaic performance of inverted polymer solar cells (PSCs), which is used as electron transport and hole blocking buffer layers. In this work, we study the effects of Al-doping level in AZO on device performance in detail. Results indicate that the device performance intensely depends on the Al-doping level. The AZO thin films with Al-doping atomic percentage of 1.0% possess the best conductivity. The resulting solar cells show the enhanced short current density and the fill factor (FF) simultaneously, and the power conversion efficiency (PCE) is improved by 74%, which are attributed to the reduced carrier recombination and the optimized charge transport and extraction between AZO and the active layer.

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Xuan Yu, Ya-feng Shi, Xiao-ming Yu, Jian-jun Zhang, Ya-ming Ge, Li-qiao Chen, Hong-jun Pan. Al-doping effects on the photovoltaic performance of inverted polymer solar cells. Optoelectronics Letters, , 12(2): 106‒109 https://doi.org/10.1007/s11801-016-6003-8

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This work has been supported by the National Natural Science Foundation of China (No.61377031), and the Scientific Research Foundation of Zhejiang Ocean University (No.Q1444).