TEM study of dislocations structure in In<sub>0.82</sub>Ga<sub>0.18</sub>As/InP heterostructure with InGaAs as buffer layer

Liang Zhao; Zuo-xing Guo; De-zeng Yuan; Qiu-lin Wei; Lei Zhao

doi:10.1007/s11801-016-5272-6

Optoelectronics Letters ›› , Vol. 12 ›› Issue (3) : 192-194. DOI: 10.1007/s11801-016-5272-6

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TEM study of dislocations structure in In_0.82Ga_0.18As/InP heterostructure with InGaAs as buffer layer

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Abstract

In order to improve the quality of detector, In_xGa_1−xAs (x=0.82) buffer layer has been introduced in In_0.82Ga_0.18As/InP heterostructure. Dislocation behavior of the multilayer is analyzed through plane and cross section [110] by transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). The dislocations are effectively suppressed in In_xGa_1−xAs (x=0.82) buffer layer, and the density of dislocations in epilayer is reduced obviously. No lattice mismatch between buffer layer and epilayer results in no misfit dislocation (MD). The threading dislocations (TDs) are directly related to the multiplication of the MDs in buffer layer.

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Liang Zhao, Zuo-xing Guo, De-zeng Yuan, Qiu-lin Wei, Lei Zhao. TEM study of dislocations structure in In_0.82Ga_0.18As/InP heterostructure with InGaAs as buffer layer. Optoelectronics Letters, , 12(3): 192‒194 https://doi.org/10.1007/s11801-016-5272-6

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This work has been supported by the National Natural Science Foundation of China (No.61474053), and the 2014 Natural Science Basic Research Open Foundation of the Key Lab. of Automobile Materials, Ministry of Education, Jilin University (No.1018320144001).