Preparation and characterization of In_0.82Ga_0.18As PIN photodetectors

Abstract

Using two-step growth method and buffer layer annealing treatment, the double heterojunction structures of In_0.82Ga_0.18As epilayer capped with InAs_0.6P_0.4 layer were prepared on InP substrate by low pressure metal organic chemical vapor deposition (LP-MOCVD). Based on the high quality In_0.82Ga_0.18As structures, the In_0.82Ga_0.18As PIN photodetector with cut-off wavelength of 2.56 μm at room temperature was fabricated by planar semiconductor technology, and the device performance was investigated in detail. The typical dark current at the reverse bias V_R=10 mV and the resistance area product R₀A are 5.02 μA and 0.29 Ω·cm² at 296 K and 5.98 nA and 405.2 Ω·cm² at 116 K, respectively. The calculated peak detectivities of the In_0.82Ga_0.18As photodetector are 1.21×10¹⁰ cm·Hz^1/2/W at 296 K and 4.39×10¹¹ cm·Hz^1/2/W at 116 K respectively, where the quantum efficiency η=0.7 at peak wavelength is supposed. The results show that the detection performance of In_0.82Ga_0.18As prepared by two-step growth method can be improved greatly.

Keywords

Buffer Layer / Response Spectrum / Cross Section Morphology / Reverse Bias Voltage / Infrared Physic

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