Enhanced photoluminescence from porous silicon microcavities by rare earth doping

Di-fei Sun; Zhen-hong Jia; Jun Zhou

doi:10.1007/s11801-016-5210-7

Optoelectronics Letters ›› , Vol. 12 ›› Issue (1) : 5-7. DOI: 10.1007/s11801-016-5210-7

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Enhanced photoluminescence from porous silicon microcavities by rare earth doping

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Abstract

The photoluminescence (PL) properties of porous silicon microcavities (PSMs) in the visible range at room temperature are improved by doping the rare earth ytterbium (Yb) into PSMs prepared by the electrochemical etching method. It is observed that PSMs doped with the rare earth have an emission band around 630 nm. Compared with the single-layer porous silicon (PS) film, the PSMs doped with Yb have narrower and stronger PL spectrum.

Keywords

Rare Earth / Porous Silicon / Distribute Bragg Reflector / Physica Status Solidus / Refractive Index Layer

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Di-fei Sun, Zhen-hong Jia, Jun Zhou. Enhanced photoluminescence from porous silicon microcavities by rare earth doping. Optoelectronics Letters, , 12(1): 5‒7 https://doi.org/10.1007/s11801-016-5210-7

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This work has been supported by the National Natural Science Foundation of China (Nos.61575168 and 61265009), and the Xinjiang Science and Technology Project (No.201412112).