Uncooled InAs_0.09Sb_0.91 photoconductors with cutoff wave-length extended to 11.5 μm

Abstract

Uncooled InAsSb photoconductors were fabricated. The photoconductors were based on InAs_0.05Sb_0.95 and InAs_0.09Sb_0.91 thick epilayers grown on InAs substrates by melt epitaxy (ME). Ge immersion lenses were set on the photoconductors. The cutoff wavelength of InAs_0.09Sb_0.91 detectors is obviously extended to 11.5 µm, and that of InAs_0.05Sb_0.95 detectors is 8.3 µm. At room temperature, the peak detectivity of D_λp* at wavelength of 6.8 µm and modulation frequency of 1 200 Hz is 1.08×10⁹ cm·Hz^1/2·W⁻¹ for InAs_0.09Sb_0.91 photoconductors, the detectivity D* at wavelength of 9 µm is 7.56×10⁸ cm·Hz^1/2·W⁻¹, and that at 11 µm is 3.92×10⁸ cm·Hz^1/2·W⁻¹. The detectivity of InAs_0.09Sb_0.91 detectors at the wavelengths longer than 9 µm is about one order of magnitude higher than that of InAs_0.05Sb_0.95 detectors, which rises from the increase of arsenic (As) composition in InAs_0.09Sb_0.91 materials.

Keywords

InSb / Lattice Mismatch / Peak Detectivity / Cutoff Wavelength / Apply Physic Letter

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