Experimental study of GaN based blue light emitting diodes with a thin AlInN layer in front of the electron blocking layer

Abstract

The GaN based blue light emitting diodes (LEDs) with a thin AlInN layer inserted in front of the electron blocking layer (EBL) are experimentally studied. It is found that inserting a thin EBL can improve the light output power and reduce the efficiency droop compared with the conventional AlGaN counterparts. Based on numerical simulation and analysis, the improvement on the electrical and optical characteristics is mainly attributed to the reduction of the electron leakage current, which increases the concentration of carriers in the quantum well (QW) when the thin AlInN layer is used.

Keywords

Quantum Well / Hole Injection / Apply Physic Letter / Electron Leakage / Light Output Power

References

[1] AkyolF, NathD N, KrishnamoorthyS, ParkP S, RajanS. Applied Physics Letters, 2012, 100: 111118

[2] FuY -Y, DaiL-P, WangS-Y, ZhangG-J. Optoelectronics Letters, 2013, 9: 278

[3] ShenY C, MüllerG O, WatanabeS, GardnerN F, MunkholmA, KramesM R. Applied Physics Letters, 2007, 91: 141101

[4] GardnerN F, MüllerG O, ShenY C, ChenG, WatanabeS, GotzW, KramesM R. Applied Physics Letters, 2007, 91: 243506

[5] KimM H, SchubertM F, DaiQ, KimJ K, SchubertE F, PiprekJ, ParkY. Applied Physics Letters, 2007, 91: 183507

[6] Ehteshamul HaqueK A S M. Optoelectronics Letters, 2013, 9: 177

[7] XieJ, NiX, FanQ, ShimadaR, OzgurU, MorkocH. Applied Physics Letters, 2008, 93: 121107

[8] WuL J, LiS T, LiuC, WangH L, LuT P, ZhangK, XiaoG W, ZhouY G, ZhengS W, YinY A, YangX D. Chinese Physics B, 2012, 21: 068506

[9] MonemarB, SerneliusB E. Applied Physics Letters, 2007, 91: 181103

[10] WangC H, ChenJ R, ChiuC H, KuoC H, LiY L, LuT C, WangS C. IEEE Photonics Technology Letters, 2010, 22: 236

[11] DavidA, GrundmannM J, KaedingJ F, GardnerN F, MihopoulosT G, KramesM R. Applied Physics Letters, 2008, 92: 053502

[12] HanS H, LeeD Y, LeeS J, ChoC Y, KwonM K, LeeS P, NohD Y, KimD J, KimY C, ParkS J. Applied Physics Letters, 2009, 94: 231123

[13] WangC H, KeC C, LeeC Y, ChangS P, ChangW T, LiJ C. Applied Physics Letters, 2010, 97: 261103

[14] WangT H, XuJ L. Chinese Physics B, 2013, 22: 730

[15] ChoiS, KimH J, KimS S, LiuJ, KimJ, RyouJ H, DupuisR D, FischerA M, PonceF A. Applied Physics Letters, 2010, 96: 221105

[16] KuoY K, TsaiM C, YenS H. Optics Communications, 2009, 282: 4252

[17] GongC C, FanG H, ZhangY Y, XuY Q, LiuX P, ZhengS W, YaoG R, ZhouD T. Chinese Physics B, 2012, 21: 583

[18] LiuC, LiS T, LuT P, WuL J, YinY A, XiaoG W, ZhouY G, WangH L. IEEE Photonics Technology Letters, 2012, 24: 14

[19] Bernardini F., Nitride Semiconductor Devices: Principles and Simulation, Edited by J. Piprek, New York: Wiley, 4968 (2007).

[20] VurgaftmanI, MeyerJ R, Ram-MohanL R. Journal of Applied Physics, 2001, 89: 5815

[21] http://crosslight.com/products/apsys/