Synthesis and characterization of Cu2ZnSnS4 from Cu2SnS3 and ZnS compounds

Shi-na Li , Rui-xin Ma , Dong-ran Li , Fan Yang , Xiao-yong Zhang , Xiang Li , Hong-min Zhu

Optoelectronics Letters ›› : 277 -280.

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Optoelectronics Letters ›› : 277 -280. DOI: 10.1007/s11801-015-5049-3
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Synthesis and characterization of Cu2ZnSnS4 from Cu2SnS3 and ZnS compounds

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Abstract

The Cu2ZnSnS4 (CZTS) powders are successfully synthesized by using ZnS and Cu2SnS3 as raw materials directly without any intermediate phase at 450 °C for 3 h in Ar atmosphere. The crystalline structure, morphology and optical properties of the CZTS powders are characterized by X-ray diffraction (XRD), Raman spectrum, field emission scanning electron microscopy (FESEM) and ultraviolet-visible (UV-vis) spectrophotometer, respectively. The results show that the band gap of the obtained CZTS is 1.53 eV. The CZTS film is fabricated by spin coating a mixture of CZTS powders and novolac resin with a weight percentage of 30%. The photoelectrical properties of such CZTS films are measured, and the results show an incident light density of 100 mW·cm−2 with the bias voltage of 0.40 V, and the photocurrent density can approach 9.80×10−5 A·cm2 within 50 s, giving an on/off switching ratio of 1.64.

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Photocurrent Density / Standard Card / Novolac Resin / CZTS Thin Film / CZTS Film

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Shi-na Li,Rui-xin Ma,Dong-ran Li,Fan Yang,Xiao-yong Zhang,Xiang Li,Hong-min Zhu. Synthesis and characterization of Cu2ZnSnS4 from Cu2SnS3 and ZnS compounds. Optoelectronics Letters 277-280 DOI:10.1007/s11801-015-5049-3

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