Gain enhancement of terahertz surface plasmon in electrically pumped multilayer graphene

Yu-ping Zhang , Ya-qing Liu , Yan-yan Cao , Tong-tong Li , Huan-huan Lü , Xiao-yan Huang , Guang-jun Ren , Hui-yun Zhang

Optoelectronics Letters ›› : 49 -52.

PDF
Optoelectronics Letters ›› : 49 -52. DOI: 10.1007/s11801-015-4201-4
Article

Gain enhancement of terahertz surface plasmon in electrically pumped multilayer graphene

Author information +
History +
PDF

Abstract

We propose a surface plasmon (SP) structure in electrically pumped multiple graphene-layer (MGL), and calculate the functions of dynamic conductivity and absorption coefficient. Meanwhile, the dependences of absorption coefficient on different factors are simulated. SP can get gain when absorption coefficient is negative, and the SP gain can be enhanced by lowering temperature, applying high bias voltage and choosing the graphene with proper layer number and long momentum relaxation time. The study on SP gain is hopeful to be used in amplifiers and graphene-based plasmon devices.

Keywords

Bias Voltage / Multilayer Graphene / Apply Bias Voltage / Bias Voltage Versus / Dynamic Conductivity

Cite this article

Download citation ▾
Yu-ping Zhang, Ya-qing Liu, Yan-yan Cao, Tong-tong Li, Huan-huan Lü, Xiao-yan Huang, Guang-jun Ren, Hui-yun Zhang. Gain enhancement of terahertz surface plasmon in electrically pumped multilayer graphene. Optoelectronics Letters 49-52 DOI:10.1007/s11801-015-4201-4

登录浏览全文

4963

注册一个新账户 忘记密码

References

[1]

NovoselovK S, GeimA K, MorozovS V, JiangD, KatsnelsonM I, GrigorievaI V, DubonosS V, FirsovA A. Nature, 2005, 438: 197

[2]

ZhangY P, YinY H, LiuM, WuZ X, ShenD L, WangC L, ZhangH Y. Journal of Optoelectronics·Laser, 2013, 24: 190

[3]

GaoY H, ZhangG, WangJ, JiangW L, GaoX, BoB X. Journal of Optoelectronics·Laser, 2013, 24: 1054

[4]

RyzhiiV, RyzhiiM, OtsujiT. Journal of Applied Physics, 2007, 101: 083114

[5]

RyzhiiV, RyzhiiM, SatouA, OtsujiT, DubinovA A, AleshkinV Y. Journal of Applied Physics, 2009, 106: 084507

[6]

RyzhiiM, RzhiiV. Japanese Journal of Applied Physics, 2007, 46: 151

[7]

ZhangY P, ZhangH Y, YinY H, LiuL Y, ZhangX, GaoY, ZhangH Y. Acta Physica Sinica, 2012, 61: 047800

[8]

RyzhiiV, RyzhiiM, MitinV, OtsujiT. Journal of Applied Physics, 2011, 110: 094503

[9]

CuiY D, LiuM, ZengC. Laser Physics Letters, 2014, 11: 055106

[10]

DubinovA A, AleshkinV Y, MitinV, OtsujiT, RyzhiiV. J. Phys.: Condens. Matter, 2011, 23: 145302

[11]

RyzhiiV, SatouA, OtsujiT. Journal of Applied Physics, 2007, 101: 024509

[12]

RyzhiiV, OtsujiT, RyzhiiM, ShurM S. Journal of Physics D-Applied Physics, 2012, 45: 302001

[13]

SvintsovD, VyurkovV, RyzhiiV, OtsujiT. Journal of Applied Physics, 2013, 113: 053701

[14]

RyzhiiV, RyzhiiM, MitinV, SatouA, OtsujiT. Japanese Journal of Applied Physics, 2011, 50: 094001

[15]

RyzhiiV, OtsujiT, RyzhiiM, LeimanV G, YurchenkoS O, MitinV, ShurM S. Journal of Applied Physics, 2012, 112: 104507

[16]

RyzhiiV, RyzhiiM, MitinV, ShurM S, SatouA, OtsujiT. Journal of Applied Physics, 2013, 113: 174506

[17]

RyzhiiV, SemenikhinI, RyzhiiM, SvintsovD, VyurkovV, SatouA, OtsujiT. Journal of Applied Physics, 2013, 113: 244505

[18]

RyzhiiM, RyzhiiV, OtsujiT, MitinV, ShurM S. Physical Review B, 2010, 82: 075419

[19]

FalkovskyL A, PershogubaS S. Physical Review B., 2007, 76: 153410

[20]

FalkovskyL A, VarlamovA A. The European Physical Journal C, 2007, 56: 281

[21]

Hanson GeorgeW. Journal of Applied Physics, 2008, 103: 064302

[22]

XuX G, SultanS, ZhangC, CaoJ C. Applied Physics Letters, 2010, 97: 011907

AI Summary AI Mindmap
PDF

77

Accesses

0

Citation

Detail

Sections
Recommended

AI思维导图

/