Nano-photonic crystal formation on highly-doped n-type silicon

Fu-ru Zhong; Zhen-hong Jia

doi:10.1007/s11801-015-4181-4

Optoelectronics Letters ›› , Vol. 11 ›› Issue (1) : 10-12. DOI: 10.1007/s11801-015-4181-4

Article

Nano-photonic crystal formation on highly-doped n-type silicon

Fu-ru Zhong¹^,^a ,
Zhen-hong Jia²

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Abstract

We present a novel electrochemical technique for the fabrication of nano-photonic crystal structures. Based on a specially designed electrolyte, porous silicon (PSi) layers with different porosities are possible to be produced on highly-doped n-type silicon substrate by varying the applied current density which determines the size and the morphology of pores. By applying an alternative current density modulation during anodization, porous silicon photonic crystals are obtained using HF-containing electrolyte without oxidizing components. The current burst model (CBM) is employed to interpret the mechanism of the formation of the macropore porous silicon.

Keywords

Photonic Crystal / Porous Silicon / Space Charge Region / Field Emission Scanning Electron Microscopy Image / Distribute Bragg Reflector

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Fu-ru Zhong, Zhen-hong Jia. Nano-photonic crystal formation on highly-doped n-type silicon. Optoelectronics Letters, , 11(1): 10‒12 https://doi.org/10.1007/s11801-015-4181-4

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This work has been supported by the National Natural Science Foundation of China (No.61265009), the Excellent Youth Foundation of Shihezi University (No.2012ZRKXYQ-YD20), and the Doctoral Research Foundation of Shihezi University (No.RCZX201327).