Nano-photonic crystal formation on highly-doped n-type silicon

Abstract

We present a novel electrochemical technique for the fabrication of nano-photonic crystal structures. Based on a specially designed electrolyte, porous silicon (PSi) layers with different porosities are possible to be produced on highly-doped n-type silicon substrate by varying the applied current density which determines the size and the morphology of pores. By applying an alternative current density modulation during anodization, porous silicon photonic crystals are obtained using HF-containing electrolyte without oxidizing components. The current burst model (CBM) is employed to interpret the mechanism of the formation of the macropore porous silicon.

Keywords

Photonic Crystal / Porous Silicon / Space Charge Region / Field Emission Scanning Electron Microscopy Image / Distribute Bragg Reflector

References

[1] AlvarezS D, SchwartzM P, MiglioriB, RangC U, ChaoL, SailorM J. Physica Status Solidi A: Applications and Materials Science, 2007, 204: 1439

[2] GoncharK A, MusabekG K, TaurbayevT I, TimoshenkoV Y. Semiconductors, 2011, 45: 614

[3] RuminskiA M, MooreM M, SailorM J. Advanced Functional Materials, 2008, 18: 3418

[4] WangC-f, LiJ. Journal of Optoelectronics·Laser, 2014, 25: 1129

[5] ZhongF-r, LüX-y, JiaZ-h, TianM. Optoelectronics Letters, 2013, 9: 105

[6] LenshinA S, KashkarovV M, SeredinP V, MinakovD A, AgapovB L, KuznetsovaM A, MoshnikovV A, DomashevskayaE P. Semiconductors, 2012, 46: 1079

[7] HarrazF A, El-SheikhS M, SakkaT, OgataY H. Electrochimica Acta, 2008, 53: 6444

[8] GeD H, JiaoJ W, ZhangS, WangY L. Electrochemistry Communications, 2010, 12: 603

[9] GarahanA, PilonL, YinJ, SaxenaI. Journal of Applied Physics, 2007, 101: 14320

[10] DubeyR S, GautamD K. Optoelectronics and Advanced Materials-Rapid Communications, 2007, 1: 436

[11] CarstensenJ, ChristophersenM, HasseG, FöllH. Journal of the Electrochemical Society, 2000, 182: 63