C-cut Nd-doped vanadate crystal self-Raman laser with narrow Q-switched envelope and high mode-locked repetition rate

Abstract

In this paper, a passively Q-switched and mode-locked c-cut Nd-doped vanadate crystal self-Raman laser at 1.17 μm is firstly demonstrated by using Cr⁴⁺:YAG. Two crystals of Nd³⁺:YVO₄ and Nd³⁺:GdVO₄ are adopted to generate laser, respectively. With the incident pump power of 13 W, the average output powers of 678 mW and 852 mW at 1.17 μm are obtained with the durations of Q-switched envelope of 1.8 ns and 2 ns, respectively. The mode-locked repetition rates are as high as 2.3 Hz and 2.2 GHz, respectively. As far as we know, the Q-switched envelope is the narrowest and the mode-locked repetition rate is the highest at present in this field. In addition, yellow laser output is also achieved by using the LiB₃O₅ frequency doubling crystal.

Keywords

Saturable Absorber / Average Output Power / Incident Pump Power / GdVO4 / Initial Transmission

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