Synthesis and photoluminescence properties of the 4H-SiC/SiO₂ nanowires

Abstract

4H-SiC/SiO₂ nanowires are synthesized and the temperature-dependent photoluminescence (PL) properties of the nanowires are studied. Their structure and chemical composition are studied by scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), and Raman spectra. At room temperature, an ultraviolet PL peak and a green PL band are observed. From the PL spectrum measured in the temperature range from 80 K to 300 K, the free excition emission, donor bound excition emission and their multiple-phonon replicas have been observed in ultraviolet region, and their origins have been identified. Moreover, it has been found that the temperature dependence of the free exciton peak position can be described by standard expression, and the thermal activation energy values extracted from the temperature dependence of the free exciton and bound exciton peak integral intensity are about 40 meV and 181 meV, respectively.

Keywords

Free Exciton / Longitudinal Acoustic / Excition Emission / High Power Electronic Device / Prepared Nanowires

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