Resonant cavity enhanced photoluminescence of tensile strained Ge/SiGe quantum wells on silicon-on-insulator substrate

Abstract

The tensile strained Ge/SiGe multiple quantum wells (MQWs) grown on a silicon-on-insulator (SOI) substrate were fabricated successfully by ultra-high chemical vapor deposition. Room temperature direct band photoluminescence from Ge quantum wells on SOI substrate is strongly modulated by Fabry-Perot cavity formed between the surface of Ge and the interface of buried SiO₂. The photoluminescence peak intensity at 1.58 μm is enhanced by about 21 times compared with that from the Ge/SiGe quantum wells on Si substrate, and the full width at half maximum (FWHM) is significantly reduced. It is suggested that tensile strained Ge/SiGe multiple quantum wells are one of the promising materials for Si-based microcavity light emitting devices.

Keywords

Quantum Confinement Effect / Multiple Quantum / Apply Physic Letter / SiGe Layer / Scanning Transmission Electron Microscope Image

References

[1] HuoY, LinH, ChenR, MakarovaM, RongY, LiM, KaminsT I, VuckovicJ, HarrisJ S. Applied Physics Letters, 2011, 98: 011111

[2] WangX, LiH, Camacho-AguileraR, CaiY, KimerlingL C, MichelJ, LiuJ. Optics Letters, 2013, 38: 652

[3] SchmidM, OehmeM, GollhoferM, KascheM, KasperE, SchulzeJ. Electroluminescence of Unstrained and Tensile Strained Ge-on-Si LEDsIEEE 9^th International Conference on IEEE, 2012, 135

[4] ChenY, LiC, ZhouZ, LaiH, ChenS, DingW, ChengB, YuY. Applied Physics Letters, 2009, 94: 141902

[5] HuoY, LinH, ChenR, RongY, KaminsT I, HarrisJ S. Frontiers of Optoelectronics, 2012, 5: 112

[6] FanW J. Journal of Applied Physics, 2013, 114: 183106

[7] LiC, ChenY, ZhouZ, LaiH, ChenS. Applied Physics Letters, 2009, 95: 251102

[8] SchmidM, OehmeM, GollhoferM, KornerR, KachelM, KasperE, SchulzeJ. Thin Solid Films, 2013,

[9] KuoYH, LeeYK, GeY, RenS, RothJE, KaminsTI, MillerDAB, HarrisJS. Nature, 2005, 437: 1334

[10] TsujinoS, SiggH, MusslerG, ChrastinaD, von KanelH. Applied Physics Letters, 2006, 89: 262119

[11] BonfantiM, GrilliE, GuzziM, VirgilioM, GrossoG, ChrastinaD, IsellaG, von KanelH, NeelsA. Physical Review B, 2008, 78: 041407

[12] ChenY, LiC, LaiH, ChenS. Nanotechnology, 2010, 21: 115207

[13] LiC. Institute of Semiconductors, 2000, Beijing, Chinese Academy of Science

This work has been supported by the National Natural Science Foundation of China (Nos.61036003 and 61176092), and the Ph.D. Programs Foundation of Ministry of Education of China (No.20110121110025).